TYSEMI 1PS76SB70

Product specification
1PS76SB70
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
Low forward volatge
+0.1
2.6-0.1
Guard ring protected
Very small plastic SMD package
0.475
1.0max
0.375
+0.05
0.1-0.02
Low diode capacitance.
Absolute Maximum Ratings Ta = 25
PARAMATER
SYMBOL
CONDITIONS
MIN
MAX
UNIT
continuous reverse voltage
VR
70
V
continuous forward current
IF
70
mA
70
mA
100
mA
repetitive peak forward current
IFRM
non-repetitive peak forward current
IFSM
storage temperature
Tstg
junction temperature
tp
1 s; ä
0.5
tp < 10 ms
-65
+150
-65
+150
Tj
operating ambient temperature
150
Tamb
E lectrical C haracteristics T a = 25
PARAMATER
SYMBOL
continuous forward voltage
VF
continuous reverse current
IR
diode capacitance
Cd
therm al resistance from junction to am bient
R thj-a
C O N D IT IO N S
MAX
U N IT
IF = 1 m A
410
mV
I F = 10 m A
750
mV
V
I F = 40 m A
1
V R = 50 V ; note 1
100
V R = 70 V ; note 1
10
VR = 0 V; f = MHz
5
pF
450
K /W
A
A
N ote:
1.P ulse test: tp = 300
s; ä = 0.02.
Marking
Marking
S2
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4008-318-123
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