Product specification 1SS187 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ●Diode capacitance :Cd=2.2pF(typ.) 0.4 3 ● Fast reverse recovery time:trr=1.6ns(typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VRM 85 V Maximun reverse voltage Reverse voltage VR 80 V Average forward current IO 100 mA Maximum forward current IFM 300 mA Surge current IFSM 2 A Power dissipation PD 150 mW Junction temperature TJ 125 ℃ Tstg -55 to 125 ℃ Storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Forward voltage VF Reverse voltage leakage current IR Testconditons Min Typ IF=1mA 0.61 IF=10mA 0.74 IF=100mA 0.92 Max Unit V 1.2 VR=30V 0.1 VR=80V 0.5 μA Diode capacitance CD VR=0V, f=1MHz 2.2 4 pF Reverse recovery time trr IF=10mA 1.6 4 ns ■ Marking Marking D3 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1