Product specification BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Power dissipation (T a mb =25 ) Forward Current Reverse Voltage Operating and storage junction temperature range Symbol Limits Unit PD 150 mW IF 75 mA VR 85 V T J , T stg -55 to +150 Electrical Characteristics Ta = 25 Param eter Sym bol Reverse breakdown voltage V (BR) Reverse voltage leakage current Forward Conditions Min I R = 100 85 CD Reverse recovery tim e t rr V 2 V R =25 V 0.03 I F =1 m A 715 I F =10 m A 855 I F = 50 m A 1000 I F =150 m A 1250 V R =0 V,f=1MHz 1.5 pF 4 ns VF Diode capacitance Unit V R =75 V IR voltage A Max A mV Marking Type BAS16T BAW56T BAV70T BAV99T Marking A2 JD JJ JE http://www.twtysemi.com [email protected] 4008-318-123 1 of 1