TYSEMI 2SC5355

Transistors
SMD Type
Product specification
2SC5355
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Features
2.3
+0.1
0.60-0.1
0.127
max
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
High DC current gain: hFE = 20 (min)
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High collector breakdown voltage: VCEO = 400 V
+0.15
0.50 -0.15
Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max)
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
V
VEBO
7
Collector current ( DC)
IC
5
Collector current (Pulse)
ICP
7
Base current
Collector power dissipation
IB
Ta = 25
PC
Junction temperature
http://www.twtysemi.com
A
W
25
TC = 25
Storage temperature range
1
1.5
A
Tj
150
Tstg
-55 to +150
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SC5355
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 480 V, IE = 0
100
ìA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
ìA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
600
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
V
VCE = 5 V, IC = 1 mA
12
VCE = 5 V, IC = 0.5 A
20
DC current gain
hFE
65
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.25 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 2 A, IB = 0.25 A
1.3
V
Switching time Rise time
Switching time Storage time
Switching time Fall time
tr
0.5
tstg
2.0
tf
0.3
ìs
Marking
Marking
C5355
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[email protected]
4008-318-123
2 of 2