TYSEMI 2SC4446

Transistors
IC
SMD Type
Product specification
2SC4446
Features
Very small-sized package
High VEBO.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
150
mA
Collector current(Pulse)
ICP
300
mA
Base current
IB
30
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SC4446
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 6V , IC = 1mA
fT
VCE = 6V , IC = 1mA
Gain bandwidth product
Testconditons
Min
135
Base-to-emitter saturation voltage
600
130
VCE(sat) IC = 50mA , IB = 5mA
Collector-to-emitter saturation voltage
Typ
VBE(sat) IC = 50mA , IB = 5mA
MHz
0.15
0.5
0.85
1.2
V
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
pF
ton
50
ns
tstg
590
ns
tf
110
ns
Cob
Turn-on time
Storage time
Fall time
VCB = 6V, f = 1MHz
V
2.2
Output capacitance
hFE Classification
H
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2