TYSEMI FZT749

Transistors
SMD Type
Product specification
FZT749
SOT-223
Unit: mm
+0.2
3.50-0.2
+0.2
6.50-0.2
0.1max
+0.05
0.90-0.05
25 Volt VCEO.
3 Amp continuous current.
+0.1
3.00-0.1
Low saturation voltage.
+0.15
1.65-0.15
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
4
Excellent hFE specified up to 6A .
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-35
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
ICM
-8
A
Peak pulse current
IC
-3
A
Power dissipation
Ptot
2
W
Tj,Tstg
-55 to +150
Operating and storage temperature range
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
FZT749
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Breakdown Voltages
V(BR)CBO IC=-100ìA
-35
Breakdown Voltages
V(BR)CEO IC=-10mA
-25
V
Breakdown Voltages
V(BR)EBO IE=-100ìA
-5
V
Collector Cut-Off Currents
ICBO
VCB=-30V
VCB=-30V,Ta = 100
Collector Cut-Off Currents
IEBO
VEB=4V
V
-0.1
-10
ìA
-0.1
ìA
Saturation Voltages *
IC=-1A, IB=-100mA
VCE(sat)
IC=-3A, IB=-300mA
-0.12
-0.40
-0.3
-0.6
V
Saturation Voltages *
VBE(sat) IC=-1A, IB=-100mA
-0.9
-1.25
V
Base-emitter ON voltage *
VBE(on) IC=-1A, VCE=-2V
-0.8
-1.0
V
Static Forward Current Transfer Ratio
Transitional frequency
hFE
fT
IC=-50mA, VCE=-2V*
70
200
IC=-1A, VCE=-2V*
100
200
IC=-2A, VCE=-2V*
75
150
IC=-6A, VCE=-2V*
15
50
IC=-100mA, VCE=-5V, f=100MHz
100
160
300
MHz
Output capacitance
Cobo
VCB=-10V, f=1MHz
55
Turn-on time
t(on)
IC=-500mA, VCC=-10V
40
ns
Turn-off time
t(off)
IB1=IB2=-50mA
450
ns
* Pulse test: tp = 300 ìs; d
100
pF
0.02.
Marking
Marking
FZT749
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2