Transistors SMD Type Product specification FCX589 Features SOT-89 PNP silicon planar medium. Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 0.44-0.1 +0.1 2.50-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 4.00-0.1 +0.1 1.80-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Peak pulse current IC -1 A Continuous collector current ICM -2 A IB -200 mA Ptot 1 W Tj,Tstg -65 to +150 Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FCX589 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=-100ìA -50 V Breakdown Voltages * V(BR)CEO IC=-10mA -30 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 V Collector-base cut-off current ICBO VCB=-30V -100 nA Collector -Emitter Cut-Off Current ICES VCE=-30V -100 nA Emitter Cut-Off Current IEBO VEB=-4V -100 nA Collector-emitter saturation voltage * IC=-1A, IB=-100mA VCE(sat) IC=-2A, IB=-200mA -0.35 -0.65 V Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-100mA -1.2 V Base-Emitter Turn-on Voltage * VBE(on) IC=-1A, VCE=-2V -1.1 V Static Forward Current Transfer Ratio Transitional frequency hFE fT Output capacitance Cobo * Pulse test: tp = 300 ìs; d IC=-1mA, VCE=-2V* 100 IC=-500mA, VCE=-2V* 100 IC=-1A, VCE=-2V* 80 IC=-2A, VCE=-2V* 40 IC=-100mA, VCE=-5V f=100MHz 100 300 MHz 15 VCB=-10V, f=1MHz pF 0.02. Marking Marking P89 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2