Transistors IC Diodes SMD Type Product specification HN1C07F Unit: mm Features Excellent Current Gain(hFE)linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 500 mA Collector current Base current IB 50 mA power dissipation PD 300 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 50V, IE=0 0.1 A Emitter cutoff current IEBO VEB = 5V, IC = 0 0.1 A DC current gain * Collector-emitter saturation voltage * hFE VCE = 1V , IC = 100mA 70 VCE = 6V , IC = 400mA 25 VCE(sat) IC = 100mA, IB = 10mA Base emitter voltage * VBE VCE = 1V, IC = 100mA Output capacitance Cob VCE = 6V, IE = 0, f = 1MHz Transition frequency fT *. PW VCE = 6V, IE = 20mA 240 0.1 0.25 V 0.8 1.0 V 7 pF 300 MHz 350ìs,duty cycle 2% http://www.twtysemi.com [email protected] 4008-318-123 1 of 1