TYSEMI 2SD1006

Transistors
IC
SMD Type
Product specification
2SD1006
Features
High collector to emitter voltage: VCEO
100V.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
IC
0.7
A
Collector current
Collector current (pulse) *
IC(pu)
1.2
A
Collector l power dissipation
Pc
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*. PW
10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
550
620
650
mV
Base-emitter voltage *
VBE
VCE =10V , IC = 10mA
Collector cutoff current
ICBO
VCB = 100V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 5V, IC=0
100
nA
DC current gain *
hFE
VCE =1V , IC = 5.0mA
45
200
VCE =1V , IC = 100mA
90
200
400
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
0.3
0.6
V
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB = 50mA
0.9
1.5
V
Output capacitance
Cob
Transition product
fT
*. PW
VCB = 10V , IE = 0 , f = 1.0MHz
10
pF
VCE = 10V , IE = -10mA
90
MHz
350ìs,duty cycle 2%
hFE Classification
Marking
HM
HL
HK
hFE
90 180
135 270
200 400
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4008-318-123
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