Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V IC 0.7 A Collector current Collector current (pulse) * IC(pu) 1.2 A Collector l power dissipation Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 550 620 650 mV Base-emitter voltage * VBE VCE =10V , IC = 10mA Collector cutoff current ICBO VCB = 100V, IE=0 100 nA Emitter cutoff current IEBO VEB = 5V, IC=0 100 nA DC current gain * hFE VCE =1V , IC = 5.0mA 45 200 VCE =1V , IC = 100mA 90 200 400 Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA 0.3 0.6 V Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA 0.9 1.5 V Output capacitance Cob Transition product fT *. PW VCB = 10V , IE = 0 , f = 1.0MHz 10 pF VCE = 10V , IE = -10mA 90 MHz 350ìs,duty cycle 2% hFE Classification Marking HM HL HK hFE 90 180 135 270 200 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1