TYSEMI MMBZ5258B

SMD Type
Product specification
MMBZ5258B
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
Ideally Suited for Automated Assembly Processes
1
0.55
General Purpose, Medium Current
+0.1
1.3-0.1
+0.1
2.4-0.1
Planar Die Construction
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
@ IF = 10mA
Forward Voltage
Power Dissipation *1
Thermal Resistance, Junction to Ambient Air *1
Symbol
Rating
Unit
VF
0.9
V
Pd
350
mW
357
/W
R
JA
Tj, TSTG
Operating and Storage Temperature Range
-65 to +150
*1. Part mounted on FR-4 PC board with recommended pad layout
Electrical Characteristics @TA=25
unless otherwise specified
Maximum ZenerImpedance
*2
Zener Voltage Range *1
Maximum Reverse
Leakage Current *1
Type Number
Vz @IZT
MMBZ5258B
IZT
Nom (V)
Min (V)
Max (V)
mA
36
34.2
37.8
3.4
ZZT @ IZT
ZZK @ IZK=
0.25mA
IR
uA
V
70
700
0.1
27
@ VR
*1. Short duration test pulse used to minimize self-heating effect.
*2. f = 1KHz.
Marking
Marking
KM3
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1 of 3
SMD Type
Product specification
MMBZ5258B
1000
Tj = 25 °C
CT, TOTAL CAPACITANCE (pF)
0.3
0.2
100
VR = 1V
VR = 2V
0.1
10
10
1
0
0
25
50
75
100
125
150
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 2 Total Capacitance vs Nominal Zener Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
100
1000
PPK, PEAK SURGE POWER (W)
PD, POWER DISSIPATION (W)
0.4
IZ = 1.0mA
100
10
1
10
1
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 3 Zener Voltage vs. Zener Impedence
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1
10
100
1000
PULSE WIDTH (ms)
Fig. 4 Maximum Non-repetitive Surge Power
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2 of 3
SMD Type
Product specification
MMBZ5258B
50
30
Tj = 25°C
Tj = 25°C
10
5V6
12
6V8
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
40
8V2
30
20
10
Test Current IZ
20mA
0
Nominal Zener Voltage
15
20
Test current IZ
18
22
10
27
33
36
39
0
0
1
2
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 5 Zener Breakdown Characteristics
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10
[email protected]
0
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 6 Zener Breakdown Characteristics
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40
3 of 3