Product specification BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Forward Voltage at IF = 10 mA Parameter VF 0.9 V Power Dissipation * PD 350 mW Junction Temperature Tj 150 Storage Temperature Range TS -65 to + 150 RthA 417 Thermal Resistance Junction to Ambient Air * /W *Device mounted on FR-4 PC board with recommended pad layout, Electrical Characteristics Ta = 25 (unless otherwise noted) Zener Voltage Range *1 Type Number VZ @ IZT BZX84C3V0 Maximum Zener Impedance *2 IZT Nom (V) Min (V) Max (V) mA 3.0 2.8 3.2 5.0 ZZT @ IZT 95 ZZK @ IZK 600 Maximum Reverse Current *1 IR Typical Temperature Coefficient @ IZT mV/ VR mA A V 1.0 10 1 Min Max -3.5 0 *1. Short duration test pulse used to minimize self-heating effect. *2. f = 1KHz. Marking Marking Z13 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BZX84C3V0 400 50 Tj = 25°C C2V7 C3V9 C4V7 C6V8 40 IZ, ZENER CURRENT (mA) Pd, POWER DISSIPATION (mW) C3V3 C5V6 300 200 100 C8V2 C9V1 30 20 Test Current IZ 5.0mA 10 0 0 100 0 200 0 TA, Ambient Temperature, (°C) Fig. 1 Power Derating Curve 30 Tj = 25°C 1 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 1000 C10 Tj = 25 °C CT, TOTAL CAPACITANCE (pF) IZ, ZENER CURRENT (mA) C12 C15 20 C18 Test current IZ 2mA C22 10 Test current IZ 5mA C27 C33 VR = 1V VR = 2V 100 VR = 1V VR = 2V C36 C39 10 1 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics http://www.twtysemi.com 40 [email protected] 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 4 Total Capacitance vs Nominal Zener Voltage 4008-318-123 2 of 2