TYSEMI S1NB05

Product specification
S1NB05 - S1NB100
1N
■ Features
● Glass passivated chip junctions
Unit: mm
4
1
3
2
● Surge overload rating to 30 Amps peak
● Reliable low cost molded plastic construction
● Ideal for printed circuit board applications
1. +
2. AC in
3. AC in
4. -
_
+
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
S1NB05 S1NB10 S1NB20 S1NB40 S1NB60 S1NB80 S1NB100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRMM
VRWM
VDC
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VRMS
35
70
140
280
420
560
700
V
Average Forward Rectified Current
IO
1.0
A
IFSM
50
A
VF
1.05
V
IR
5
500
μA
VISO
2400
V
RθJA
40
℃/W
Tj, Tstg
-55 to +150
℃
TA=@ 40℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single half-sine-wave Superimposed on Rated Load
(JEDECmethod)
Forward Voltage (per element) @ IF = 1.0A
Reverse Current(per element) @ Rated VR ,
TA = 25℃
TA = 125℃
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
S1NB05 - S1NB100
Typical Characteristics
‚jƒ
(Amperes)
Average Forward Current, Io
60Hz Resistive or Inductive Loads
1.00
0.75
0.50
0.25
0
€j
(Amperes)
Peak Forward Surge Current
1.25
ˆŠ‰
†j‡
„j…
‹hŒ

0
50
{
150
100
|^}
~hj
Number of Cycles at 60 Hz
Ambient Temperature, ℃
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 1. FORWARD CURRENT DERATING CURVE
Ž^
Instantaneous Forward Current
Amperes
100
1.0
0.1
0.01
0.4
0.6
08
1.0
1.2
1.4
1.6
1.8
Instantaneous Reverse Current, I
(Microamperes)
¯±
· °F²h³j´¶¸ µ
10
1.0
0.1
¹»
ºD¼j½¶À ¾
¿Á
Instantaneous Forward Voltage (Volts)
.01
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
hž›ž
0
©›ª
40
«j¬
­j®
Ÿh j ¢¡h£j¤¦¥^§Š¨
Percent of Rated Peak Reverse Voltage
Capacitance, pF
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
•^–
”
œ
—h˜
™hš›š
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2