VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Features • Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications • High Bandwidth • Low Input Noise Equivalent Power • Single 5V Supply • Integrated AGC • Fibre Channel and Gigabit Ethernet Part Number Data Rate (Gb/s) Bandwidth (MHz) Input Noise (µW rms) Optically Active Area (µm diameter) VSC7710 1.25 1300 .22 75 General Description The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs-III process are fully utilized to provide a very high bandwidth and low noise amplifier. The PIN detector is 75µm in diameter. The detector bias is supplied internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flatwindowed or lensed packages. The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900-1600 nm spectral range which exhibit very high performance and ease of use. VSC7710 Block Diagram +5V + _ G52139-0, Rev 2.2 04/02/01 D0 D1 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Table 1: Electro-Optic Specifications Symbol Parameter VDD Supply Voltage λ Wavelength fc Min Typ Max Units Conditions 4.5 5.5 V 1270 1355 nm Low Frequency Cutoff 1.4 MHz Tr Tf Rise/Fall Time 300 ps S Sensitivity -28 Dr Dynamic Range 25 Ro Single Ended Output Impedance 25 90 ¾ Vd Differential Output Voltage 0.25 1.2 V P = -3 dBm, R = 100Ω dB f = 0.3MHz - 40MHz Hybrid Differential 62 mA P = -28 to -3 dBm 1300 MHz -3dB P = -22dBm, fr = 50MHz mV/µW ΡΛ = 100Ω P = -22dBm fr = 50MHz PSRR Power Supply Rejection Ratio Is Supply Current BW Optical Modulation Bandwidth 700 Rd Differential Responsivity 2.5 dBm -3dB P = -22dBm, fr = 50MHz 20% to 80% P = -3 dBm BER 10-12 B = 1063Mb/s dB 35 Vn Output Noise Voltage 1.2 mVRMS BW = 1500MHz, P = 0mW NEPO Input Noise Equivalent Optical Power 0.22 µW RMS BW = 1500MHz, P = 0mW PDJ Pattern Dependent Jitter 60 ps P = -3dBm ±10% Voltage Window DCD Duty Cycle Distortion 5 % P = -3dBm ýV Bias Offset Voltage 200 mV P = -3dBm Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Figure 1: Amplitude vs. Frequency Frequency response of VSC7710WB (Upper 3db frequency is measured with respect to response at 50 MHz) Table 2: Absolute Maximum Ratings Symbol Parameter Limits VDD Power Supply 6V Tstg Storage Temperature -55°C to 125°C (case temperature under bias) Pinc Incident Optical Power +3 dBm Table 3: Recommended Operating Conditions Symbol Parameter Limits VDD Power Supply 4.5-5.5V (5.0V nominal) Top Operating Temperature 0°C (ambient) to 70°C case G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Table 4: Pin Table Specifications for TO-46(ball lens), TO-56 (flat window) Packages and Bare Die Symbol Description + D OUT D–OUT Data output normal (with reference to incident light) Data output complement (inverting) (with reference to incident light) VDD Power supply GND Ground (package case) Note: Pin Diagram is identical for both TO-46 and TO-56 package styles. Figure 2: Pin Diagram VDD D+OUT D–OUT GND Figure 3: Schematic View of Bare Die Pad Assignments ANODE CATHODE D–OUT GND GND VDD D+OUT Page 4 VDD ANODE © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Thermal Resistance Calculation In order to relate the junction temperature to an equivalent case temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 package styles). Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages. Chip Size 0.168cm x 0.104cm Thermal Path 2 Chip Area A 0.015 cm Die height (Tdie) 0.066 cm Epoxy thickness (Tepoxy) 0.0076 cm Header thickness (Theader) (ave. for TO-46 and TO-56) 0.115 cm TJ θGaAs θEXPOXY Thermal Conductivities K GaAs 0.55W / cm °C K epoxy 0.0186W / cm °C K kovar 0.17W / cm °C θGaAs = θepoxy = θkovar = Tdie = KGaAsA 0.066 θKOVAR TC = 8 °C/W 0.55 x 0.015 Tepoxy KepoxyA = Tkovar KkovarA = 0.0076 = 27.24 °C/W 0.0186 x 0.015 0.12 = 47 °C/W 0.17 x 0.015 θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W Example: For VSC7710 at nominal supply current of 25mA and VDD = 5V Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Figure 4: Eye Diagram Page 6 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Notes on Measurement Conditions and Applications Note 1: Noise Measurement Method Power Meter HP 437B with 8481D Power Sensor 3GHz BW Hybrid Coupler P2 P1 DUT Board RMS Output Noise The noise voltage, (Vn), is calculated from the Output Noise Power, (Pn), into 50 ohm. Vn = Pn • 50 The noise voltage, Vn, at the output is referred back to the noise power at the input through the responsivity R (with R in volts/watts) Vn NEP = ------R The bit error rate can be expressed as: BER = e(-Q2/2) √2πQ For a BER = 1 ×10 – 12 the parameter Q = 7 – 12 The sensitivity(s) at a bit error rate of 1 ×10 is calculated as follows: ( S = 10 log10 Q NEP 1mW ), where the NEP is in units of milliwatts and S is in dBm, respectively. G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Note 2:Measurement Setup for Frequency Response DC1 Lightwave Component Analyzer HP8702 AC1 Hybrid Coupler Laser Optical Attenuator Bias T AC2 Bias T DC2 DUT Power Supply Note 3:Bias T Schematic DC Out Signal Page 8 AC Out © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication Package Information Hybrid Die G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7710 Table 6: Die Pad Descriptions Page 10 Pad Locations Pad Number Pad Name Y Pad Size Pass Opening Pad Finish Finish Thickness X 1 ANODE 104.5 880 110 x 110 89 x 89 Gold 1500 Å 2 CLON 71.7 1440.6 110 x 110 89 x 89 Gold 1500 Å 3 VDD 71.7 1601.2 110 x 110 89 x 89 Gold 1500 Å 4 VGND 790 1602.1 110 x 110 89 x 89 Gold 1500 Å 5 CLOP 790 1441.1 110 x 110 89 x 89 Gold 1500 Å 6 ANODE 765.9 781.2 110 x 110 89 x 89 Gold 1500 Å 7 CATHODE 764.3 595.8 110 x 201 89 x 180 Gold 1500 Å 8 VGND 595.4 55 246 x 110 223 x 86 Gold 1500 Å 9 VDD 258 55 246 x 110 223 x 86 Gold 1500 Å 10 CATHODE 428.5 530.5 522 x 522 310 x 310 Gold 1500 Å © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication To-56 Flat Window Reference Isometric G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 To-46 Ball Lens—7mm Lead Length Reference Isometric Page 12 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication TO-46 Ball Lens—13mm Lead Length Reference Isometric G52139-0, Rev 2.2 04/02/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 13 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Ordering Information The order number for this product is formed by a combination of the device type and package type. VSC7710 xx Device Type Photodetector/Transimpedance Amplifier Family for Optical Communication Package WB: TO-56 Flat Window WC: TO-46 Ball Lens—7mm Lead Length WD: TO-46 Ball Lens—13mm Lead Length X: Bare Dice Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All informaiton in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. Page 14 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01