VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Features • Integrated Photodetector/Transimpedance Amplifier Optimized for High-Speed Optical Communications Applications • High Bandwidth • Low Input Noise Equivalent Power • Large Optically Active Area • Integrated AGC • Single 5V Power Supply • Fibre Channel/Gigabit Ethernet Compatible Part Number Data Rate Bandwidth (MHz) Input Noise (µW rms) Optically Active Area (µm diameter) VSC7810 Full Speed: 1.25Gb/s 1200 0.45 100 General Description The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution for converting light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in either die form, flat-windowed packages or in ball-lens packages. By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photodetectors. Integration also allows superior tracking over process, temperature and voltage between the photodetector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre Channel Electro-Optic Receivers which exhibit very high performance and ease of use. VSC7810 Block Diagram Photodetector/Transimpedance Amplifier +3.3V DOUTP DOUTN GND Both DOUTP and DOUTN are back-terminated to 25Ω. G52145-0, Rev 4.1 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Table 1: Electro-Optical Specifications(1) Symbol Parameter Min Typ(2) Max Units Conditions VSS Supply Voltage 4.5 5.0 5.5 V IDD Supply Current 13 26 40 mA PSRR Power Supply Rejection Ratio 35 - - dB λ Wavelength 700 840 850 nm fC Low Frequency Cutoff - - 1.8 MHz -3dB, P = -15dBm @ 50MHz(4) BW Optical Modulation Bandwidth 800 1200 1300 MHz -3dB, P = -15dBm @ 50MHz(4) S Sensitivity -22 -25 -27 dBm 1.063Gb/s, BER10-12(3) RO Single-Ended Output Impedance 25 - 60 Ω VD Differential Output Voltage 0.35 0.52 0.65 V RD Differential Responsivity 0.8 2.2 - mV/µW VDC Output Bias Voltage 1.2 1.5 2.5 V ∆VDC Bias Offset Voltage - 40 150 mV NEPO Input Noise Equivalent Power 0.35 0.45 0.93 µW rms P = 0mW(5) VNO Output Noise Voltage 0.55 0.66 0.75 mV rms P = 0mW(5) DCD Duty Cycle Distortion - 1.5 4.5 % P = -4.5dBm IOUT Output Drive Current 2.5 - 8 mA PDJ Pattern Dependent Jitter 20 40 60 ps P = -4.5dBm +/-10% Voltage Window - 100 - µm Diameter PPJ PP Jitter 120 160 200 ps P = -5dBm tR Rise Time 310 355 400 ps 20%-80% P = -4.5dBm tF Fall Time 280 325 370 ps 20%-80% P = -4.5dBm Optically Active Area Frequencies up to 40MHz (includes external filter). P = -4.5dBm, RLOAD = 100Ω differential RLOAD = 100Ω P = -15dBm @ 50MHz Notes: (1) Specified over 0°C (ambient) to 70°C (case). (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48. Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Figure 1: Amplifude vs. Frequency 1 096.795 514 MHz 3 Amplitude 21 1 999.700 1 000.150 Frequency (MHz) Frequency response of VSC7810WB upper 3db frequency is measured with respect to response at 50 MHz Table 2: Absolute Maximum Ratings Symbol Parameter Limits VSS TSTG Power Supply Storage Temperature 6V -55°C to 125°C (case temperature under bias) HSTG HOP Storage Humidity Operating Humidity 5 to 95% R.H. (including condensation) 8 to 80% R.H. (excluding condensation) PINC Incident Optical Power IS Impact Shock VIB Vibration +3dBm 500 G. Half Sine Wave Pulse Duration 1 +/-0.5 ms 3 blows in each direction 20 > 2000 > 20 Hz, 10 Minutes 10 G. Peak Acceleration 4 Complete Cycles, 3 Perpendicular Axes VESD ESD Voltage on DOUTP, DOUTN, VSS, GND 1500V Table 3: Recommended Operating Conditions Symbol VSS TOP Parameter Power Supply Operating Temperature Limits 4.5V to 5.5V (5V nominal) 0°C (ambient) to 70° C (case) normal range and 90°C (case) extended range(1) NOTE: (1) See Note 1 in "Notes on Measurement Conditions & Applications" section of this data sheet for extended temperature range operation. G52145-0, Rev 4.1 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Table 4: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die Symbol Description DOUTP Data output normal (with reference to incident light) DOUTN Data output complement (inverting, with reference to incident light) VSS Power supply GND Ground (package case) Note: Pin Diagram is identical for both TO-46 and TO-56 package styles. Figure 2: Pin Diagram VSS DOUTP DOUTN GND Bottom View Figure 3: Schematic View of Bare Die Pad Assignments GND DOUTN GND DOUTP VSS GND Page 4 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Temperature Dependence of Operating Parameters This section describes the dependence of important operating parameters shown in Table 1 as a function of die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equivalent case temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 package styles. Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages Chip Size 0.168cm x 0.104cm Thermal Path 2 Chip Area A 0.015cm Die Height (TDIE) 0.066cm Epoxy Thickness (TEPOXY) 0.0076cm Header Thickness (THEADER) (Average for TO-46 and TO-56 package) 0.115cm TJ θGaAs θEXPOXY Thermal Conductivities K GaAs 0.55W/cm °C K epoxy 0.0186W/cm °C K kovar 0.17W/cm °C θGaAs = θepoxy = θkovar = Tdie = KGaAsA 0.066 θKOVAR TC = 8 °C/W 0.55 x 0.015 Tepoxy KepoxyA = Tkovar KkovarA = 0.0076 = 27.24 °C/W 0.0186 x 0.015 0.12 = 47 °C/W 0.17 x 0.015 θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W Example: For VSC7810 at nominal supply current of 25mA and Vss = 5V Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C G52145-0, Rev 4.1 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Typical Operating Characteristics IDD vs. Die Temperature Bandwidth vs. Die Temperature 35 1400 33 -3dB Bandwidth (MHz) Supply Current (mA) 1300 5.5V 31 29 27 25 23 5V 4.5V 21 19 5.5V 1200 1100 4.5V 5V 1000 900 17 15 800 10 25 50 80 100 10 50 80 100 Die Temperature ( C) Responsitivity vs. Die Temperature (Small-Signal Optical Responsitivity at 850nm) RMS Jitter with PRBS7 Data vs. Die Temperature 60 3.00 2.80 50 2.60 5V 2.40 RMS Jitter (ps) Responsitivity (mV/µW) 25 Die Temperature ( C) 5.5V 2.20 2.00 1.80 4.5V 1.60 4.5V 40 30 5.5V 20 5V 1.40 10 1.20 0 1.00 10 25 50 80 80 100 Duty-Cycle Distortion vs. Die Temperature RMS Differential Output Noise Voltage vs. Die Temperature RMS Differential Output Noise Voltage (V) Duty-Cycle Distortion (%) 50 Die Temperature ( C) 54 53 52 4.5V 51 5.5V 50 49 48 5V 47 46 45 25 50 Die Temperature ( C) Page 6 25 Die Temperature ( C) 55 10 10 100 80 100 1.00 0.90 0.80 5.5V 0.70 0.60 0.50 4.5V 0.40 5V 0.30 0.20 0.10 0.00 10 25 50 80 100 Die Temperature ( C) © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Figure 4: Eye Diagram 229mV 46mV /div not trig'd -231mV 39.34ns 15.56mV Top -23.1mV Btm 39.91ns Lft Rgt 40.55ns G52145-0, Rev 4.1 04/05/01 Mean 40.23ns RMS∆ 25.98ps PkPk 146.4ps Hits 6505 183ps/div µ±1σ 66.349% µ±2σ 97.54% µ±3σ 100% Wfms 1377 41.17ns Left 39.90521ns Right 40.54571ns © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Notes on Measurement Conditions and Applications Note 1: Noise Measurement Method The VSC7810 is specified to operate in the following two ranges of temperature: (a) “normal” from 0°C (ambient) to 70°C (case) and (b) “Extended” from 0°C (ambient) to 90°C (case). In the extended range, the operating parameters are specified in Table 6. Table 6: Specifications Under Extended Temperature Range of Operation Symbol BW Parameter Optical Modulation Bandwidth Min Typ(2) Max Units 800 900 - MHz Conditions -3dB, P= -15dBm @ 50MHz Note 2: Noise Measurement Method 3GHz BW Hybrid Coupler Power Meter HP 437B P1 with P2 8481D Power Sensor DUT Board RMS Output Noise The noise voltage, (Vn), is calculated from the Output Noise Power, (Pn), into 50Ω. Vn = Pn • 50 The noise voltage, Vn, at the output is referred back to the noise power at the input through the responsivity R (with R in volts/watts) Vn NEP = ------R The bit error rate can be expressed as: BER = e (-Q2/2) . √2πQ where , – 12 For a BER = 1 ×10 , the parameter Q = 7. – 12 The sensitivity(s) at a bit error rate of 1 ×10 is calculated as follows: S = 10 log10 NEP (Q 1mW ), where the NEP is in units of milliwatts and S is in dBm, respectively. Page 8 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Note 3: Measurement Setup for Frequency Response DC1 Lightwave Component Analyzer HP8702 AC1 Bias T Hybrid Coupler Optical Attenuator Laser AC2 Bias T DC2 DUT Power Supply Note 4: Bias T Schematic DC Out Signal G52145-0, Rev 4.1 04/05/01 AC Out © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 Package Information Individual Die (4x) 0.365 φ0.1 (4x) 0.055 (6x) 0.11 DOUTP (2x) 0.74 GND VSC7809 (2x) 0.29 0.35 1.48 1.58 VSS GND (2x) 0.247 0.05 0.05 (2x) 0.15 DOUTN GND 1.68 (4x) 0.11 (4x) 0.055 0.42 (2x) 0.1235 (2x) 0.18 0.05 0.835 0.05 0.94 1.04 ± 0.05 Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 TO-56 Flat Window Package Reference Isometric G52145-0, Rev 4.1 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 TO-46 Ball Lens Package—7mm Lead Length Reference Isometric Page 12 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier Family for Optical Communication VSC7810 TO-46 Ball Lens Package—13mm Lead Length Reference Isometric G52145-0, Rev 4.1 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 13 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Page 14 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Data Sheet VSC7810 G52145-0, Rev 4.1 04/05/01