WILLAS DTC114YUA

WILLAS
FM120-M+
DTC114YUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Features
•
50
--70
100
200
150
---
.010(0.25)
.003(0.08)
ry
---6
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
--40
Unit
V
V
---
mA
----150
mW
ć
ć
im
ina
IC(MAX)
Pd
Tj
Tstg
Method 2026
Supply voltage
Input voltage
• Polarity
: Indicated by cathode band
Output current
• Mounting Position : Any
Power dissipation
• Weight
: Approximated 0.011 gram
Junction temperature
Storage temperature
---
-----55
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic, SOD-123H
• Case
Absolute
maximum
ratings @ 25к
,
terminals, solderable Min
per MIL-STD-750
Symbol • Terminals :Plated
Parameter
Typ
Max
VCC
VIN
IO
0.146(3.7)
0.130(3.3)
.096(2.45)
.078(2.00)
•
.004(0.10)MIN.
•
•
•
SOD-123H
SOT-323
better reverse leakage current and thermal resistance.
Pb-Free package is available
• Low profile surface mounted application in order to
space. code suffix ”G”
RoHS optimize
productboard
for packing
Low power loss, high efficiency.
•
Halogen free product for packing code suffix “H”
current capability, low forward voltage drop.
• High
Epoxy
meets
UL 94 V-0 flammability rating
• High surge capability.
Moisure Sensitivity Level 1
• Guardring for overvoltage protection.
Built-in bias resistors enable the configuration of an inverter circuit
• Ultra high-speed switching.
without connecting external input resistors
• Silicon epitaxial planar chip, metal silicon junction.
The bias resistors consist of thin-film resistors with complete
• Lead-free parts meet environmental standards of
isolation
to allow negative
MIL-STD-19500
/228 biasing of the input. They also have the
advantage
of
almost
completely
parasitic effects.
suffix "G"
• RoHS product for packing code eliminating
Only the
on/off
conditions
need
to
be
set
for
operation, making
Halogen free product for packing code suffix "H"
device
design
easy
Mechanical data
.054(1.35)
.045(1.15)
•
.087(2.20)
.070(1.80)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
load, derate current
by 20%
Electrical
Characteristics
@ 25к
For capacitive
.047(1.20)
Min
Max
UnitFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM130-MH
SYMBOLTyp
FM120-MH
--- 12 --- 13 V
0.3
14
15
16
18
10
115
120
----1.4
V
.004(0.10)MAX.
20
30
40
50
60
80
100
150
200
VRRM
--0.1
0.3
V
35
42
56
70
105
140
VRMS --- 14 0.88 21 mA 28
----50
60
80
100
150
200
VDC --- 20 0.5 30 ­A 40
.016(0.40)
68
----1.0
13
.008(0.20)
K¡
7.0 IO
10
3.7
4.7
5.7
30
IFSM
--250
--MHz
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.043(1.10)
.032(0.80)
Pr
el
Symbol
Parameter
RATINGS
VI(off)
Input voltage (VCC=5V, IO=100­A)
Marking
Code
VI(on)
(VO=0.3V, IO=1mA)
Maximum Recurrent Peak Reverse Voltage
VO(on)
Output voltage (I=
O/II 5mA/0.25mA)
Maximum
RMS
II =
InputVoltage
current (VI 5V)
IO(off)
Output
current
(VCC
=
=50V, VI 0)
Maximum
DC
Blocking
Voltage
GI
DC current gain (VO=5V,
=
IO 5mA)
Maximum Average Forward Rectified Current
R
Input
resistance
1
R2/R1
Resistance ratio
Peak
Forward Surge Current 8.3 ms single half sine-wave
Transition frequency
fT
superimposed
rated load
(JEDEC
method)
(VOon=10V,
IO=5mA,
f=100MHz)
Typical Thermal Resistance (Note 2)
.056(1.40)
Dimensions in inches and (millimeters)
-55 to +125
Suggested Solder
Pad Layout
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
*Marking: 64
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
40
120
@T A=125℃
IR
0.50
0.70
0.70
0.90
0.9
0.85
0.92
0.5
10
1.90
NOTES:
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.