WILLAS DTA144EUA

WILLAS
FM120-M+
DTA144EUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Features
• Low power loss, high efficiency.
SOT-323
optimize board space.
•
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Typ
Max
Unit
-50
--V
VIN
Input voltage
--10
V
-30
IO
Output MAXIMUM
current
-----CHARACTERISTICS
mA
RATINGS AND ELECTRICAL
IC(MAX)
-100
Pd
--- specified.
200
--mW
Ratings
atPower
25℃ dissipation
ambient temperature unless otherwise
Tj
Junction
--ć
Single
phase
half temperature
wave, 60Hz, resistive of inductive--load. 150
TFor
Storage
temperature
-55
--150
ć
stg
capacitive load, derate current by 20%
Min
---40
RATINGS
Marking Code
Electrical
Characteristics @ 25к
12
13
14
Storage Temperature Range
.056(1.40)
FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
.047(1.20)
20
30
40
Maximum Recurrent Peak Reverse Voltage
VRRM
Max
Symbol
Parameter
Min
Typ
Unit
28
Maximum
RMS
VRMS --- 14 --- 21 V
V
-0.5
Input Voltage
voltage (VCC=-5V, IO=-100­A)
I(off)
---VDC --- 20 -3.0 30 V
V
(VO=-0.3V, IO=-2mA)
I(on)
Maximum
DC Blocking Voltage
40
VO(on)
Output voltage
=
(IO/II -10mA/-0.5mA
-----0.3
V
Maximum
Average
Forward
Current
II
=
Input current
(VI Rectified
-5V)
--- IO ---0.18
mA
­A
IO(off)
Output current (VCC=
=-50V, VI 0)
--- ---0.5
Peak Forward Surge Current 8.3 ms single half sine-wave
GI
DC current gain (VO=-5V,
=
IO -5mA)
68IFSM ----superimposed
on resistance
rated load (JEDEC method)
R1
Input
32.9
47
61.1
K¡
Thermal
Resistance
RΘJA 1.0
RTypical
Resistance
ratio (Note 2)
0.8
1.2
2/R1
Transition
frequency
Typical
Junction
Capacitance
(Note 1)
fT
--- CJ 250
--MHz
(VO =-10V, IO=5mA, f=100MHz)
-55 to +125
Operating Temperature Range
TJ
15
50
16
60
18
80
10
100
115
150
120
200
35
42
56
70
105
140
150
200
50 .004(0.10)MAX.
60
80
100
1.0
30
.016(0.40)
.008(0.20)
40
CHARACTERISTICS
- 65 to +175
Suggested
FM180-MH Solder
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T
A=25℃
*Marking:
@T A=125℃
120
Dimensions
in inches
(millimeters)
-55and
to +150
TSTG
Rated DC Blocking Voltage
.087(2.20)
.070(1.80)
Dimensions in inches and (millimeters)
.054(1.35)
.045(1.15)
: Indicated
by cathode
Absolute• Polarity
maximum
ratings
@ 25кband
: Any
Symbol • Mounting Position
Parameter
VCC
Supply
voltage
• Weight : Approximated 0.011 gram
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
.004(0.10)MIN.
•
•
•
0.012(0.3) Typ.
.043(1.10)
.032(0.80)
•
0.146(3.7)
0.130(3.3)
current capability,
low forward voltage drop.
• High
Pb-Free
package
is available
• High surge capability.
RoHS• product
for packing code suffix ”G”
Guardring for overvoltage protection.
high-speed
• Ultra
Halogen
free
productswitching.
for packing code suffix “H”
Epoxy• meets
UL 94 V-0
flammability
Silicon epitaxial
planar
chip, metalrating
silicon junction.
Moisure
Sensitivity
Level
parts
meet 1environmental standards of
• Lead-free
/228 the configuration of an inverter circuit
Built-in MIL-STD-19500
bias resistors enable
RoHS
product
for
packing
code suffix
"G"
•
without connecting external input
resistors
Halogen
free
product
for
packing
code
suffix "H"with complete
The bias resistors consist of thin-film resistors
Mechanical
data
isolation
to allow negative
biasing of the input. They also have the
advantage
of :almost
completely
UL94-V0
rated flameeliminating
retardant parasitic effects.
• Epoxy
Only the
on/off
conditions
need
to
be set for operation, making
• Case : Molded plastic, SOD-123H
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.50
Pad Layout
0.85
0.70
0.9
0.70
0.5
16IR
0.92
10
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA144EUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.