WINNERJOIN BAS116LT1

RoHS
BAS116LT1
SURFACE MOUNT SWITCHING DIODE
D
T
,. L
• Low Leakage Current Applications
Package:SOT-23
• Medium Speed Switching Times
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Non-Repetitive
Peak
Symbol
Reverse
VRM
Peak Repetitive Reverse Voltage
VRRM
working Peak Reverse Voltage
VRWM
Rating
Unit
100
V
75
V
Voltage
DC Blocking Voltage
VR
Peak Forward Current
IF
200
mAdc
Continuous
IFM
300
mAdc
(Note)
PD
300
mW
Forward
IC
Current(Note)
Power
Dissipation
2.4
Derate Above 25
Junction Temperature
Tj
150
Storage Temperature
Tstg
-50-150
Note:Diode Ceramic Substrate 10mm
8.0mm
R
T
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol
C
E
L
Forward Voltage
Reverse Breakdown Voltage
E
Reverse Voltage Leakage Current
J
E
Capacitance
Reverse Recovery Time
Note:Diode On Ceramic Substrate 10mm
W
O
0.7mm
Min
C
O
N
mW/
Max
Unit
0.9
V
IF=1.0mA
1.0
V
IF=10mA
1.1
V
IF=50mA
1.25
V
IF=150mA
—
Vdc
I BR = 100 uAdc
5.0
uA
VR=75V
80
nA
VR=75V Tj=150
Cj
2.0
PF
VR=0 f=1.0MHz
Trr
3.0
uS
IF=10mA to IR=10mA
VF
V (BR)
75
IR
8.0mm
Test Conditions
0.7mm
DEVICE MARKING:
BAS116LT1=JV
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]