YEASHIN SF804

DATA SHEET
SF801~SF807
SEMICONDUCTOR
VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes
TO-220AC
FEATURES
Unit:inch(mm)
• Low forward voltage drop
.196(5.0)
.163(4.16)
• High current capability
.419(10.66)
MAX
• High reliability
• High surge current capability
.054(1.39)
.045(1.15)
DIA
.139(3.55)
.MIN
.269(6.85)
.226(5.75)
• Good for switching mode application
.624(15.87)
.548(13.93)
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
PIN1
2
3
.177(4.5)
.MAX
environment substance directive request
.114(2.9)
.098(2.5)
.50(12.7)
MAX
MECHANICAL DATA
.038(0.96)
.019(.5)
• Case: Molded plastic
• Epoxy: UL 94V-0 rate flame retardant
.100(2.54)
.025(0.65)
MAX
• Lead: Lead solderable per MIL-STD-202,
method 208 guranteed
• Polarity: As Marked
• Mounting position: Any
• Weight: 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF801
SF802
SF803
SF804
SF805
SF806
SF807
Maximum Recurrent Peak Reverse V oltage
TYPE NUMBER
50
100
150
200
300
400
600
V
Maximum RMS Voltage
35
70
105
140
210
320
420
V
Maximum DC Blocking Voltage
50
100
150
200
300
400
600
V
Maximum Average Forward Rectif ied Current
.375"(9.5mm) Lead Length at Tc=100 °C
Peak For ward Surge Current , 8.3 ms single half s ine-wave
super imposed on rated load (J EDEC method)
Maximum Instantaneous Forward Vol tage at 8.0A
8.0
A
125
A
0.95
Maxi mum DC Reverse Cur rent Tc=25 °C
1.30
1.70
10
at Rated DC B locking Vol tage Tc=100 °C
35
Typi cal Junction Capacitance (Note 2)
Operating and Storage Temperature Range TJ, TSTG
V
µA
500
Maximum Reverse Recovery Time (Note 1)
UNITS
µA
50
nS
50
pF
-55 +150
°C
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
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1
REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF801~SF807
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10Ω
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
1Ω
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
AVERAGE FORWARD CURRENT,(A)
50Ω
NONINDUCTIVE
(+)
OSCILLISCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
1cm
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
SET TIME BASE FOR
12
10
8
Single Phase
6
Half Wave 60Hz
Resistive Or Inductive Load
4
2
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE,( C)
50 / 10ns / cm
FIG.3-TYPICAL FORWARD
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
CHARACTERISTICS
1000
REVERSE LEAKAGE CURRENT, (µA)
10
60
00V
V-4
100
V-2
1.0
0V
00V
3.0
300
INSTANTANEOUS FORWARD CURRENT,(A)
50
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.4
.6
.8
1.0
1.2
1.4 1.6
100
10
Tc=25 C
1.0
0.1
1.8
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FORWARD VOLTAGE,(V)
FIG.6-TYPICAL JUNCTION CAPACITANCE
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
125
JUNCTION CAPACITANCE,(pF)
PEAK FORWARD SURGE CURRENT,(A)
Tc=100 C
100
75
Tj=25 C
8.3ms Single Half
Sine Wave
50
JEDEC method
25
150
125
100
75
50
25
0
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
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.01
.05
.1
.5
1
5
10
REVERSE VOLTAGE,(V)
2
REV.02 20110725
50
100