DATA SHEET UF1600CT~UF1608CT SEMICONDUCTOR ISOLATION ULTRAFAST RECOVERY RECTIFIERS 50 to 800 Volts 16 Amperes CURRENT FEATURES TO-220AB • Plastic package has Underwriters Laboratory Unit:inch(mm) .196(5.0) .163(4.16) Flammability Classification 94V-O utilizing .419(10.66) MAX Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 .054(1.39) .045(1.15) DIA .139(3.55) .MIN .269(6.85) .226(5.75) • Low power loss, high efficiency. .624(15.87) .548(13.93) • Low forwrd voltge, high current capability PIN1 • High surge capacity. 2 3 .177(4.5) .MAX .114(2.9) .098(2.5) • Ultra fast recovery times, high voltage. .50(12.7) MAX • High temperature soldering : 260OC / 10 seconds at terminals .038(0.96) .019(.5) • Pb free product at available : 99% Sn above meet RoHS environment substance directive request .100(2.54) .025(0.65) MAX MECHANCALDATA • Case: ITO-220AB full molded plastic package + AC • Terminals: Lead solderable per MIL-STD-202, Method 208 Positive CT • Polarity: As marked. AC • Standard packaging: Any • Weight: 0.08 ounces, 2.26grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% RETEMARAP SYMBOL UF UF 1600CT 1601CT UF 1602CT UF UF 1603CT 1604CT UF 1606CT UF 1608CT UNITS Maximum Recurrent Peak Reverse V oltage VRRM 50 100 200 300 400 600 800 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 V Maximum Average Forward Current .375”(9 .5mm) IAV 16 A IFSM 125 A Peak Forward Surge Current :8.3ms single half si ne-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 8.0A VF Maxi mum DC Reverse curr ent TA=25 1.30 Typical Junction Capaci tance (Note 1) Maximum Reverse Recovery Time (Note 2) 1.70 10 IR at Rated DC Blocking Voltage TA =125 V µA 500 CJ 170 130 TRR 50 75 pF ns R JC 2 °C/W TJ,TSTG -55 to +150 °C Typical Thermal Resistance (Note 3 ) Oper ating Junction and Storage Temperature Range 1.0 NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERIS TIC CURVES UF1600CT~UF1608CT t rr +0.5A 10 Noninductive 50 Noninductive 0 (-) PULSE GENERATOR NOTE 2 (+) 25Vdc (approx) (-) -0.25 (+) 1 Non inductive OSCILLOSCCOPE NOTE 1 NOTES: 1.R ise Time=7ns max -1.0 Input Im pedance=1 megohm. 22 pF 2. Rise Time=10ns max. Source Impedance = 50 Ohms 1cm SET TIME BASE FOR10ns/cm AV E R A GF EO RW A R DC U R R E N T Fig.1-REVERSERECOVERY TIM E CHARACTERISTIC AND TEST CIRCUITDIAGRAM 100 300-400V INSTANEOUS FORWARD CURRENT,(A) 50-200V 10 600-800V 1 16.0 12.0 8.0 4.0 0 0 50 150 100 O CASETEMPERA TURE, C Fig.3-FORWARD CURRENTDERATING CURVE 0.1 O 0.01 .4 .8 .6 1.0 1.2 1.4 1.6 1.8 FORWARD SU RG E CURRENT, AMPERES T=25 C J 2.0 FORWARD VOLTAGE , VOLTS Fig. 2- FORWARD CHARACTERISTICS 1000 175 150 125 100 75 50 25 10 1 O TJ= 125 C 100 NUMBER OF CYCLES AT 60Hz 100 Fig.4-PEAK FORWARD SURGE CURRENT 300 10 1.0 C A PA C I TA N C E ,p F IR- REVERSE LEAKAG E CURRENT. M IC RO AM PERES 20.0 O TJ= 25 C 250 200 UF1600CT~UF1604CT 150 O TJ = 25 C 100 50 0 0.1 20 40 60 80 100 120 140 2 5 10 20 50 100 200 500 REVERSEVOLTAGE, VOLTS %o f PIV. VOLTS Fig.6- TYPICALJUNCTION CAPACITANCE Fig.5- TYPICAL REVE RS E CHARACT ERIST ICS http://www.yeashin.com UF1606CT~UF1608CT 1 2 REV.02 20110725