DATA SHEET SF1600CT~SF1606CT SEMICONDUCTOR SUPERFAST RECOVERY RECTIFIER VOLTAGE- 50 to 400 Volts CURRENT - 16.0 Ampere FEATURES TO-220AB Unit:inch(mm) • Plastic package has Underwriters Laboratory .196(5.0) .163(4.16) Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. .419(10.66) MAX • Exceeds environmental standards of .054(1.39) .045(1.15) DIA .139(3.55) .MIN MIL-S-19500/228 .269(6.85) .226(5.75) • Low power loss, high efficiency. .624(15.87) .548(13.93) • Low forwrd voltge, high current capability • High surge capacity. PIN1 • Super fast recovery times, high voltage. 2 3 .177(4.5) .MAX .114(2.9) .098(2.5) • Epitaxial chip construction. .50(12.7) MAX • High temperature soldering : 260OC / 10 seconds at terminals .038(0.96) .019(.5) • Pb free product at available : 99% Sn above meet RoHS environment substance directive request .100(2.54) .025(0.65) MAX MECHANICAL DATA • Case: TO-220AB Molded plastic + AC • Terminals: Lead solderable per MIL-STD-202, Method 208 Positive CT • Polarity: As marked. AC • Standard packaging: Any • Weight: 0.08 ounces, 2.24grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SF1601CT SF1602CT SFR1603CT SF1604CT SF1605CT SF1606CT Maximum Recurrent Peak Reverse V oltage 50 100 150 200 300 400 V Maximum RMS Voltage 35 70 105 140 210 280 V Maxi mum DC Blocki ng Voltage 50 100 150 200 300 400 V Maximum Average Forward Rectif ied Current at Tc=90°C UNITS 16 A 125 A Peak For ward Surge Current , 8.3 ms single half sine- wave super imposed on rated load (J EDEC method) Maximum Instantaneous Forward Vol tage 0.95 at 8.0A per element 1.30 Maxi mum DC Reverse Cur rent (Note 1) Ta=25° C 10 at Rated DC Blocking Vol tage Ta=125°C 500 Typi cal Junction Capacitance (Note 1) uA 62 Maximum Reverse Recovery Time (Note 2) 35 Typical Thermal Resistance Note RθJC Oper ati ng and Storage Tempe rature Range TJ V pF 50 nS 3.0 °C/W -50 to +150 °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal Resistance Junction to CASE. http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES SF1600CT~SF1606CT 40 I N S TA N TA N E O U S F O RWA R D C U R R E N T AV E R A G E F O RWA R D C U R R E N T RATING AND CHARACTERISTIC CURVES 20.0 16.0 12.0 8.0 4.0 0 0 50 150 100 CASE TEMPERATURE, C 10 8 6 4 2 1.0 .8 .6 .4 O TJ=25 C PULSE WIDTH=200 m S .2 .1 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS O Fig.1-FORWARD CURRENTDERATING CURVE I N S TA N TA N E O U S R E V E R S E C U R R E N T, M I C R O A M P E R E S 300,400V 50,100,150,200V 20 Fig.2-TYPICALINSTANTANEOUSFORWARD CHARACTERISTIC 1000 O TC = 100 C P E A K F O RWA R D S U R G E C U R R E N T, 135 100 TC = 75OC 10 TC = 25OC 1.0 0.1 0 100 200 120 105 90 75 60 45 30 15 1 2 300 5 10 20 50 100 NO. OF CYCLE AT 60HZ PERCENTOF PEAK REVERSEVOLTAGE Fig.4-MAXIMUMNON-REPETITIVE SURGE CURRENT Fig.3-TYPICALREVERSECHARACTERISTIC C A PA C I TA N C E , p F 120 100 80 TJ = 25OC 60 40 20 0 1 2 5 10 20 50 100 200 500 REVERSEVOLTAGE, VOLTS Fig.5-TYPICALJUNCTIONCAPACITANCE http://www.yeashin.com 2 REV.02 20110725