DATA SHEET UF1600FCT~UF1608FCT SEMICONDUCTOR ISOLATION UL TRAFAST RECOVERY RECTIFIERS 50 to 800 Volts 16 Amperes CURRENT FEATURES ITO-220AB • Plastic package has Underwriters Laboratory .185(4.8) MAX Flammability Classification 94V-O utilizing .406(10.3)MAX .130(3.3) MAX Flame Retardant Epoxy Molding Compound. Unit:inch(mm) .134(3.4)DIA .113(3.0)DIA • Exceeds environmental standards of .112(2.85) .100(2.55) .272(6.9) .248(6.3) MIL-S-19500/228 .606(15.4 ) .583(14.8) • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. .161(4.1) MAX • Ultra fast recovery times, high voltage. • High temperature soldering : 260 °C/ 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .114(2.9 ) .098(2.5) .055(1.4) MAX .032(0.8) MAX .035(0.9) MAX .543(13.8) .512(13.0 ) substance directive request MECHANCALDATA .100(2.55) .100(2.55) • Case: ITO-220AB full molded plastic package + AC • Terminals: Lead solderable per MIL-STD-202, Method 208 Positive CT • Polarity: As marked. AC • Standard packaging: Any • Weight: 0.08 ounces, 2.26grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% RETEMARAP SYMBOL UF UF UF UF UF UF UF 1600FCT 1601FCT 1602FCT 1603FCT 1604FCT 1606FCT 1608FCT UNITS Maximum Recurrent Peak Reverse V oltage VRRM 50 100 200 300 400 600 800 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 V Maximum Average Forward Current .375”(9 .5mm) IAV 16 A IFSM 125 A Peak Forward Surge Current :8.3ms single half si ne-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 8.0A VF Maxi mum DC Reverse current TA=25 °C 1.30 Typical Junction Capaci tance (Note 1) Maximum Reverse Recov ery Time (Note 2) Typical Thermal Resistance (Note 3 ) 1.70 10 IR at Rated DC Blocking Voltage TA=125°C Operati ng Junction and Storage Temperature Range 1.0 V µA 500 CJ 170 130 pF TRR 50 75 ns R JC 2 °C/W TJ,TSTG -55 to +150 °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERIS TIC CURVES UF1600FCT~UF1608FCT t rr +0.5A 10 Noninductive 50 Noninductive 0 (-) PULSE GENERATOR NOTE 2 (+) 25Vdc (approx) (-) -0.25 (+) 1 Non inductive OSCILLOSCCOPE NOTE 1 NOTES: 1.R ise Time=7ns max -1.0 Input Im pedance=1 megohm. 22 pF 2. Rise Time=10ns max. Source Impedance = 50 Ohms 1cm SET TIME BASE FOR10ns/cm AV E R A GF EO RW A R DC U R R E N T Fig.1-REVERSERECOVERY TIM E CHARACTERISTIC AND TEST CIRCUITDIAGRAM 100 300-400V INSTANEOUS FORWARD CURRENT,(A) 50-200V 10 600-800V 1 16.0 12.0 8.0 4.0 0 0 50 150 100 O CASETEMPERA TURE, C Fig.3-FORWARD CURRENTDERATING CURVE 0.1 O 0.01 .4 .8 .6 1.0 1.2 1.4 1.6 1.8 FORWARD SU RG E CURRENT, AMPERES T=25 C J 2.0 FORWARD VOLTAGE , VOLTS Fig. 2- FORWARD CHARACTERISTICS 1000 175 150 125 100 75 50 25 10 1 O TJ= 125 C 100 NUMBER OF CYCLES AT 60Hz 100 Fig.4-PEAK FORWARD SURGE CURRENT 300 10 1.0 C A PA C I TA N C E ,p F IR- REVERSE LEAKAG E CURRENT. M IC RO AM PERES 20.0 O TJ= 25 C 250 200 UF1600CT~UF1604CT 150 O TJ = 25 C 100 50 0 0.1 20 40 60 80 100 120 140 2 5 10 20 50 100 200 500 REVERSEVOLTAGE, VOLTS %o f PIV. VOLTS Fig.6- TYPICALJUNCTION CAPACITANCE Fig.5- TYPICAL REVE RS E CHARACT ERIST ICS http://www.yeashin.com UF1606CT~UF1608CT 1 2 REV.02 20110725