APTGT100X120TE3 3 Phase bridge Trench IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • 17 16 15 Benefits 20 14 21 13 1 2 3 4 5 6 7 8 9 10 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Operating Area Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 11 12 Absolute maximum ratings Symbol VCES • • • • • • • TC = 25°C Max ratings 1200 140 100 280 ±20 480 Tj = 125°C 200A@1100V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2003 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT100X120TE3 – Rev 0 19 • • • • APTGT100X120TE3 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current All ratings @ Tj = 25°C unless otherwise specified Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 1.4 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 1.7 2.0 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9Ω Fall Time Typ Max 1200 Typ 7200 400 300 260 30 420 5 2.1 6.5 400 V nA Max Unit pF ns 290 45 ns 520 90 12 Symbol Characteristic VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =900A/µs IF = 100A VR = 600V di/dt =900A/µs Tj = 25°C Tj = 125°C Min Typ 1.6 1.6 Tj = 25°C 5 Tj = 125°C 9 Tj = 25°C 10 Tj = 125°C 19 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K RT = Min R25 exp B25 / 50 1 1 − T25 T V 70 Turn off Energy Reverse diode ratings and characteristics Unit V mA Typ 5 3375 mJ Max 2.1 Unit V mJ µC Max Unit kΩ K July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current T: Thermistor temperature RT: Thermistor value at T APT website – http://www.advancedpower.com 2-3 APTGT100X120TE3 – Rev 0 Electrical Characteristics APTGT100X120TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Min IGBT Diode Typ Max 0.26 0.48 2500 M5 -40 -40 -40 3 Unit °C/W V 150 125 125 4.5 300 °C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT100X120TE3 – Rev 0 July, 2003 PIN 21