AOSMD AOI1N60

AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOD1N60 & AOU1N60 & AOI1N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
TO252
DPAK
Top View
Bottom View
Top View
VDS
700V@150℃
ID (at VGS=10V)
1.3A
RDS(ON) (at VGS=10V)
< 9Ω
100% UIS Tested!
100% Rg Tested!
TO251A
IPAK
Bottom View
TO251
Top View
D
Bottom View
D
D
G
S
G
D
G
AOI1N60
AOD1N60
G
S
S
G
D
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
D
G
AOU1N60
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
S
S D
S
G
Maximum
600
Units
V
±30
V
1.3
ID
0.8
A
IDM
4
Avalanche Current C
IAR
1
A
Repetitive avalanche energy C
EAR
15
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
dv/dt
30
5
45
mJ
V/ns
W
0.36
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev 5: Aug 2011
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
Typical
45
Maximum
55
Units
°C/W
2.3
0.5
2.8
°C/W
°C/W
RθJC
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Page 1 of 6
AOD1N60/AOU1N60/AOI1N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.6
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
100
Gate Threshold Voltage
VDS=5V,ID=250µA
3
µA
4.1
4.5
nΑ
V
9
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.65A
7.5
gFS
Forward Transconductance
VDS=40V, ID=0.65A
0.9
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
1
A
ISM
Maximum Body-Diode Pulsed Current
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=1A
S
105
130
160
pF
12
14.5
18
pF
1.5
1.8
2.2
pF
2.9
3.5
5.3
Ω
6.1
8
nC
Qgs
Gate Source Charge
1.3
2
nC
Qgd
Gate Drain Charge
3.1
4
nC
tD(on)
Turn-On DelayTime
10
13
ns
tr
Turn-On Rise Time
6.7
13
ns
tD(off)
Turn-Off DelayTime
20
26
ns
tf
trr
Turn-Off Fall Time
11.5
23
ns
IF=1.3A,dI/dt=100A/µs,VDS=100V
114
137
Qrr
Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V
0.63
0.76
ns
µC
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=1A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Aug 2011
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Page 2 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
10
10V
-55°C
VDS=40V
6.5V
1
ID(A)
ID (A)
1.5
6V
125°C
1
0.5
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
2.5
14.0
Normalized On-Resistance
13.0
12.0
RDS(ON) (Ω
Ω)
4
VGS=10V
11.0
10.0
9.0
8.0
7.0
VGS=10V
ID=0.5A
2
1.5
1
0.5
0
0
0.5
1
1.5
2
-100
2.5
1.2
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.0E+00
40
1.1
125°C
1.0E-01
1
25°C
IS (A)
BVDSS (Normalized)
ID=30A
125°
1.0E-02
0.9
1.0E-03
25°
0.8
1.0E-04
-100
Rev 5: Aug 2011
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=480V
ID=1A
12
9
6
100
Coss
10
Crss
3
1
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
8
10
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
10µs
100µs
ID (Amps)
RDS(ON)
limited
1ms
10ms
0.1s
0.1
TJ(Max)=150°C
TC=25°C
DC
TJ(Max)=150°C
TC=25°C
600
Power (W)
1
400
200
0.01
0
1
10
100
1000
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.8C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Aug 2011
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Page 4 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.5
50
1.2
Current rating ID(A)
Power Dissipation (W)
60
40
30
20
0.9
0.6
0.3
10
0
0.0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 5: Aug 2011
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Page 5 of 6
AOD1N60/AOU1N60/AOI1N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 5: Aug 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6