AOSMD AOTF15B60D

AOTF15B60D
600V, 15A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor
control applications.
VCE
IC (TC=100°C)
600V
15A
VCE(sat) (TC=25°C)
1.6V
Top View
C
TO-220F
G
G
C
E
E
AOTF15B60D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
IC
Pulsed Collector Current, Limited by TJmax
I CM
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
TC=25°C
TC=100°C
Units
V
±20
V
30$
Continuous Collector TC=25°C
TC=100°C
Current
Continuous Diode
Forward Current
AOTF15B60D
600
15$
60
A
60
A
30
IF
A
15
A
Diode Pulsed Current, Limited by TJmax
I FM
60
A
Short circuit withstanding time VGE = 15V, VCE
≤ 400V, Delay between short circuits ≥ 1.0s,
TC=150°C
t SC
10
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
50
25
W
-55 to 150
°C
300
°C
AOTF15B60D
65
3
Units
°C/W
°C/W
4
°C/W
$:TO220F IC Follow TO220
Rev0: July 2012
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Page 1 of 9
AOTF15B60D
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
VF
V GE(th)
I CES
I GES
g FS
Min
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=15A
Collector-Emitter Saturation Voltage
VGE=0V, IC=15A
Diode Forward Voltage
VCE=600V, VGE=0V
Zero Gate Voltage Collector Current
Gate-Emitter leakage current
Forward Transconductance
Max
Units
V
600
-
-
TJ=25°C
-
1.6
1.8
TJ=125°C
-
1.85
-
TJ=150°C
-
1.92
-
TJ=25°C
-
1.43
1.72
TJ=125°C
-
1.39
-
TJ=150°C
-
1.36
-
-
5.8
-
TJ=25°C
-
-
10
TJ=125°C
-
-
300
TJ=150°C
-
-
1500
VCE=VGE, IC=1mA
Gate-Emitter Threshold Voltage
Typ
V
V
V
µA
VCE=0V, VGE=±20V
-
-
±100
VCE=20V, IC=15A
-
7.7
-
-
1290
-
pF
-
97
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
nA
S
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
3.1
-
pF
Qg
Total Gate Charge
-
25.4
-
nC
Q ge
Gate to Emitter Charge
-
9.5
-
nC
-
8.3
-
nC
-
74
-
A
-
2.4
-
Ω
VGE=15V, VCE=480V, IC=15A
Q gc
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
VGE=15V, VCE=400V, RG=20Ω
I C(SC)
short circuits ≥ 1.0s
VGE=0V, VCE=0V, f=1MHz
Gate resistance
Rg
SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)
t D(on)
Turn-On DelayTime
-
21
-
ns
tr
Turn-On Rise Time
-
19
-
ns
t D(off)
Turn-Off Delay Time
-
73
-
ns
tf
Turn-Off Fall Time
-
10
-
ns
E on
Turn-On Energy
-
0.42
-
mJ
E off
Turn-Off Energy
-
0.11
-
mJ
E total
t rr
Total Switching Energy
-
0.53
-
mJ
Diode Reverse Recovery Time
-
196
-
Q rr
Diode Reverse Recovery Charge
-
0.48
-
ns
µC
-
5.8
-
A
TJ=25°C
VGE=15V, VCE=400V, IC=15A,
RG=20Ω,
Parasitic Ιnductance=100nH
TJ=25°C
IF=15A,dI/dt=200A/µs,VCE=400V
I rm
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Iductive, TJ=150°C)
t D(on)
Turn-On DelayTime
-
21
-
ns
tr
Turn-On Rise Time
-
19
-
ns
t D(off)
Turn-Off Delay Time
-
91
-
ns
tf
Turn-Off Fall Time
-
8
-
ns
E on
Turn-On Energy
-
0.54
-
mJ
E off
Turn-Off Energy
-
0.19
-
mJ
E total
t rr
Total Switching Energy
-
0.73
-
mJ
Diode Reverse Recovery Time
-
235
-
Q rr
Diode Reverse Recovery Charge
-
1.1
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
8.5
-
A
TJ=150°C
VGE=15V, VCE=400V, IC=15A,
RG=20Ω,
Parasitic Inductance=100nH
TJ=150°C
IF=15A,dI/dt=200A/µs,VCE=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2012
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Page 2 of 9
AOTF15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
20V
20V
70
17V
80
17V
60
15V
IC (A)
IC (A)
15V
60
13V
40
50
13V
40
30
11V
11V
20
20
VGE= 7V
9V
9V
10
VGE=7V
0
0
0
1
2
3
4
5
6
7
0
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
1
2
3
5
6
7
90
70
VCE=20V
-40°C
80
-40°C
60
70
50
25°C
150°C
40
150°C
60
IF (A)
IC (A)
4
VCE(V)
Fig 2: Output Characteristic
(Tj=150°C )
30
50
40
25°C
30
20
20
10
10
0
0
4
7
10
13
0.0
16
VGE(V)
Fig 3: Transfer Characteristic
0.5
1.0
1.5
2.0
2.5
3.0
VF (V)
Fig 4: Diode Characteristic
4
50
100
40
80
30
60
20
40
10
20
Time (µ
µS)
VCE(sat) (V)
3
IC=15A
2
1
IC=7.5A
0
0
0
25
50
75
100
125
150
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev0: July 2012
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Current(A)
IC=30A
0
5
8
11
14
17
20
VGE (V)
Fig 6: VGE vs. Short Circuit Time
(VCE=400V,TC=25°C )
Page 3 of 9
AOTF15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=480V
IC=15A
12
Cies
9
Capacitance (pF)
IC (A)
1000
6
3
Coes
100
10
0
Cres
1
0
5
10
15
20
25
30
0
5
Qg(nC)
Fig 7: Gate-Charge Characteristics
10
15
20
25
30
35
40
VCE(V)
Fig 8: Capacitance Characteristic
Ic (A)
100
10
1
10
100
VCE (V)
Fig 10: Reverse Bias SOA
(Tj=150°C,V GE=15V)
1,000
50
Power Disspation (W)
40
30
20
10
0
25
50
75
100
125
150
TCASE(°C)
Fig 11: Power Disspation as a Function of Case
Rev0: July 2012
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Page 4 of 9
AOTF15B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10,000
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Switching Time (nS)
Switching Time (nS)
1000
100
10
Tr
100
10
1
1
0
5
10
15
20
25
IC (A)
Figure 12: Switching Time vs. IC
(Tj=150°C,V GE=15V,VCE=400V,Rg=20Ω
Ω)
30
35
0
1000
50
100
150
200
Rg (Ω
Ω)
Figure 13: Switching Time vs. Rg
(Tj=150°C,V GE=15V,VCE=400V,IC=15A)
250
8
Td(off)
Tf
Td(on)
Tr
7
100
VGE(TH)(V)
Switching Time (nS)
Td(on)
1,000
6
5
4
10
3
2
1
0
75
100
125
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=15A,Rg=20Ω
Ω)
Rev0: July 2012
25
50
175
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0
30
60
90
TJ (°C)
Figure 15: VGE(TH) vs. Tj
120
150
Page 5 of 9
AOTF15B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
1.8
Eoff
Eoff
1.5
Eon
1.5
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eon
Etotal
1
0.5
Etotal
1.2
0.9
0.6
0.3
0
0.0
0
5
10
15
20
25
30
IC (A)
Figure 16: Switching Loss vs. IC
(Tj=150°C,V GE=15V,VCE=400V,Rg=20Ω
Ω)
35
0
1
50
150
200
Rg (Ω
Ω)
Figure 17: Switching Loss vs. Rg
(Tj=150°C,V GE=15V,VCE=400V,IC=15A)
250
1.2
Eoff
Eoff
0.8
1.0
Eon
Switching Energ y (mJ)
Etotal
Switching Energy (mJ)
100
0.6
0.4
0.2
0
Eon
Etotal
0.8
0.6
0.4
0.2
0.0
0
25
Rev0: July 2012
50
75
100 125 150 175
TJ (°C)
Figure 18: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=15A,Rg=20Ω
Ω)
200
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200
250
300
350
400
450
VCE (V)
Figure 19: Switching Loss vs. VCE
(Tj=150°C,V GE=15V,IC=15A,Rg=20Ω
Ω)
500
Page 6 of 9
AOTF15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
1.8
15A
1.E-04
1.4
10A
VSD (V)
5A
1.E-06
IF=1A
VCE=400V
0.6
1.E-07
1.E-08
0.2
0
25
50
75
100
125
150
175
0
50
75
100
125
150
Temperature (°C )
Fig 21: Diode Forward voltage vs. Junction
Temperature
Temperature (°C )
Fig 20: Diode Reverse Leakage Current vs.
Junction Temperature
175
400
16
1400
70
350
14
60
300
50
250
1000
Qrr
800
40
600
30
25°C
400
150°C
200
Irm
25°C
0
10
50
20
25
30
35
IF(A)
Fig 22: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
1600
80
1400
70
150°C
1200
Qrr
40
600
30
Irm
25°C
100
200
5
10
0
15
20
25
30
35
IS (A)
Fig 23: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
20
250
16
150°C
200
12
150
25°C
100
10
0
Trr
8
S
150°C
50
25°C
0
400 500 600 700 800 900
di/dt (A/µ
µS)
Fig 24: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
Rev0: July 2012
2
25°C
20
150°C
200
0
4
300
50
800
25°C
S
60
1000
400
150°C
0
15
6
25°C
0
0
10
10
8
150
100
Trr (nS)
5
Trr
200
20
Irm(A)
0
12
150°C
S
150°C
Trr (nS)
80
Irm(A)
Qrr (nC)
25
1600
1200
Qrr (nC)
13V
1
S
ICE(S) (A)
VCE=600V
1.E-05
300
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100
200
300
4
0
400
500 600 700 800 900
di/dt (A/µ
µS)
Fig 25: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
Page 7 of 9
AOTF15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
0.001
T
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for Diode
Rev0: July 2012
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Page 8 of 9
AOTF15B60D
Rev0: July 2012
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Page 9 of 9