AOSMD AOU4N60

AOD4N60/AOI4N60/AOU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4N60 & AOI4N60 & AOU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
TO252
DPAK
Top View
Bottom View
VDS
700V@150℃
ID (at VGS=10V)
4A
RDS(ON) (at VGS=10V)
< 2.3Ω
100% UIS Tested!
100% Rg Tested!
TO251A
IPAK
Bottom View
Top View
TO251
Top View
Bottom View
D
D
D
G
S
G
S
S
G
D
D
S
G
AOI4N60
AOD4N60
Continuous Drain
CurrentB
VGS
TC=25°C
TC=100°C
S
S D
G G
S
AOU4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
D
G
Maximum
600
Units
V
±30
V
4
ID
2.6
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
2.8
A
Repetitive avalanche energy C
EAR
118
mJ
Single plused avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
Derate above 25oC
EAS
dv/dt
235
5
104
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
0.83
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev2: Jan 2012
14
PD
TL
Symbol
RθJA
RθCS
RθJC
Typical
43
Maximum
55
Units
°C/W
1
0.5
1.2
°C/W
°C/W
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Page 1 of 6
AOD4N60/AOI4N60/AOU4N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
ID=250µA, VGS=0V, TJ=150°C
700
ID=250µA, VGS=0V
VDS=600V, VGS=0V
0.67
V
V/ oC
1
VDS=480V, TJ=125°C
10
±100
3.4
µA
4.1
4.5
nΑ
V
2.3
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
1.8
gFS
Forward Transconductance
VDS=40V, ID=2A
6
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
4
A
ISM
Maximum Body-Diode Pulsed Current
14
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
420
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=4A
S
0.76
528
640
pF
35
53
70
pF
2.5
4.8
7
pF
1.2
2.5
3.8
Ω
9.5
12
14.5
nC
2.8
3.6
4.5
nC
2.2
4.4
6.6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=4A,dI/dt=100A/µs,VDS=100V
150
190
230
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
1.9
2.4
3
VGS=10V, VDS=300V, ID=4A,
RG=25Ω
17
ns
26
ns
34
ns
21
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Jan 2012
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Page 2 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
100
10V
7
VDS=40V
-55°C
6
6.5V
10
ID(A)
ID (A)
5
6V
4
3
125°C
1
2
VGS=5.5V
25°C
1
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
3
4.0
2.5
RDS(ON) (Ω
Ω)
Normalized On-Resistance
4.5
3.5
VGS=10V
3.0
2.5
2.0
1.5
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=10V
ID=2A
2
1.5
1
0.5
0
1.0
0
2
-100
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1.0E+02
ID=30A
125°C
40
1.0E+00
1
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
125°
1.0E-01
25°C
1.0E-02
0.9
25°
1.0E-03
0.8
1.0E-04
-100
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev2: Jan 2012
-50
0
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0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Page 3 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=480V
ID=2A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
10
3
Crss
0
1
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
18
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
10
RDS(ON)
1
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
600
10µs
Power (W)
ID (Amps)
1
400
10ms
0.1
200
TJ(Max)=150°C
0.01
0
1
10
100
1000
VDS (Volts)
0.00001 0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2: Jan 2012
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Page 4 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
100
4
Current rating ID(A)
Power Dissipation (W)
120
80
60
40
3
2
1
20
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
500
TJ(Max)=150°C
TA=25°C
Power (W)
400
300
200
100
0
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
Ton
Single Pulse
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev2: Jan 2012
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Page 5 of 6
AOD4N60/AOI4N60/AOU4N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev2: Jan 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6