AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS(ON) 8.8Ω ID 1.4A S Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 1.4 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 0.9 A 5.6 A 39 W 0.31 W/℃ 49 mJ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 1.4 A EAR Repetitive Avalanche Energy 0.5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 4 Value Units 3.2 ℃/W 62.5 ℃/W 110 ℃/W 1 200807222 AP02N60H/J-H o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 700 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.6A - - 8.8 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1A - 0.2 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=+30V - - +100 nA ID=1.4A - 14 20 nC IGSS 3 VGS=0V, ID=10mA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC 3 td(on) Turn-on Delay Time VDD=300V - 9.5 - ns tr Rise Time ID=1.4A - 12 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns tf Fall Time RD=214Ω - 9 - ns Ciss Input Capacitance VGS=0V - 155 240 pF Coss Output Capacitance VDS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Min. Typ. IS=1.4A, VGS=0V - - 1.5 V Source-Drain Diode Symbol Parameter 3 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=1.4A, VGS=0V, - 360 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1970 - nC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25Ω , IAS=1.4A. 3.Pulse test 4.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP02N60H/J-H 1.5 0.9 10V 6.0V 5.5V T C =150 C 1 5.0V 0.5 10V 6.0V 5.5V o ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 0.6 5.0V 0.3 V G = 4.5 V V G = 4.5 V 0 0 0 5 10 15 0 20 V DS , Drain-to-Source Voltage (V) 5 10 15 20 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =0.6A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 100 5 4 T j = 150 o C VGS(th) (V) IS (A) 10 o T j = 25 C 3 1 2 0.1 1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP02N60H/J-H f=1.0MHz 1000 I D =1.4A 12 V DS =320V V DS =400V V DS =480V C (pF) VGS , Gate to Source Voltage (V) 16 8 C iss 100 4 C oss C rss 0 10 0 4 8 12 16 20 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100us 1 ID (A) 1ms 10ms 100ms DC 0.1 o T c =25 C Single Pulse 0.01 Normalized Thermal Response (Rthjc) 10 Duty factor=0.5 0.2 0.1 0.1 700 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code 02N60H LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E1 E A1 B2 F B1 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 02N60J YWWSSS Package Code LOGO Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence 6