AP02N70EI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ ESD Improved Capability
G
▼ Simple Drive Requirement
BVDSS
700V
RDS(ON)
7Ω
ID
1.6A
▼ RoHS Compliant & Halogen-Free
S
Description
AP02N70 from APEC provide the designer with the best
combination of fast switching , low on-resistance and costeffectiveness .
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
1.6
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1
A
6.4
A
27.8
W
13
mJ
1.6
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
4.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Parameter
Data & specifications subject to change without notice
1
201301041
AP02N70EI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
700
-
-
V
VGS=10V, ID=0.8A
-
-
7
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.8A
-
0.65
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+10
uA
Qg
Total Gate Charge
ID=0.8A
-
17
30
nC
Qgs
Gate-Source Charge
VDS=560V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
td(on)
Turn-on Delay Time
VDD=350V
-
10
-
ns
tr
Rise Time
ID=0.8A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=4.7Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
300
pF
Coss
Output Capacitance
VDS=25V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
IS=1.6A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1.6A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2550
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N70EI-HF
2
2
10V
9.0V
8.0V
7.0V
ID , Drain Current (A)
2
10V
9.0V
8.0V
7.0V
o
T C =150 C
2
ID , Drain Current (A)
o
T C =25 C
2
V G =6.0V
1
1
V G =6.0V
1
1
0
0
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
8.0
12.0
16.0
20.0
24.0
28.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
2.0
1.6
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =0.8A
V G =10V
1
1.2
0.8
0.8
0.4
0.6
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( ℃ )
Tj , Junction Temperature ( ℃ )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
1.2
T j =150 o C
o
T j =25 C
4
Normalized VGS(th) (V)
1.1
IS(A)
3
2
1.0
0.9
0.8
1
0.7
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature ( ℃ )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N70EI-HF
f=1.0MHz
12
1000
I D =0.8A
VGS , Gate to Source Voltage (V)
10
8
C (pF)
V DS =560V
6
C iss
100
4
C oss
2
C rss
10
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
100us
ID (A)
1
1ms
10ms
100ms
0.1
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
Single Pulse
0.01
0.01
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4