AP1RC03GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
BVDSS
RDS(ON)
ID
D
30V
0.99mΩ
260A
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
D
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
D
S
S
S
G
PMPAK ® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
4
Continuous Drain Current (Chip), VGS @ 10V
Rating
Units
30
V
+20
V
260
A
3
57.6
A
3
46
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
300
A
PD@TC=25℃
Total Power Dissipation
104
W
PD@TA=25℃
Total Power Dissipation
5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
25
℃/W
Data and specifications subject to change without notice
1
201304102
AP1RC03GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=25A
-
0.85
0.99
mΩ
VGS=5V, ID=25A
-
1.2
1.5
mΩ
0.8
1.25
2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=25A
-
65
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=25A
-
85
136
nC
Qgs
Gate-Source Charge
VDS=15V
-
30
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
27
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
24
-
ns
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
160
-
ns
tf
Fall Time
VGS=10V
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
14800 23680
pF
Coss
Output Capacitance
VDS=15V
-
1420
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
1280
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
2.2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=20A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
55
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Package limitation current is 60A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1RC03GMT-HF
200
320
10V
7.0V
6.0V
5.0V
V G = 4.0V
240
T C = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
160
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
160
120
80
80
40
0
0
0
2
4
6
8
10
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.8
I D =20A
V G =10V
I D = 12 A
o
T C =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
1.2
1.4
1.2
1.0
1
0.8
0.8
0.6
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.0
I D =250uA
Normalized VGS(th)
1.6
IS(A)
20
T j =150 o C
T j =25 o C
1.2
0.8
10
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1RC03GMT-HF
f=1.0MHz
16000
10
C iss
8
12000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 25 A
V DS =15V
6
8000
4
4000
2
C oss
C rss
0
0
0
40
80
120
160
200
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100us
Operation in this area
limited by RDS(ON)
ID (A)
100
1ms
10
10ms
T C =25 o C
Single Pulse
100ms
DC
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.001
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
300
ID , Drain Current (A)
VG
QG
200
4.5V
QGS
QGD
100
Limited by package
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4