AP96T07AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 75V RDS(ON) 4.25mΩ ID G 170A S Description AP96T07A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D TO-220(P) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) 170 A ID@TC=25℃ Continuous Drain Current, VGS @ 10V3 120 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 110 A 440 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 250 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.5 ℃/W 62 ℃/W 1 201303273 AP96T07AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 75 - - V VGS=10V, ID=40A - - 4.25 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 100 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 170 272 nC Qgs Gate-Source Charge VDS=60V - 43 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 58 - nC td(on) Turn-on Delay Time VDS=40V - 40 - ns tr Rise Time ID=40A - 105 - ns td(off) Turn-off Delay Time RG=3.3Ω - 80 - ns tf Fall Time VGS=10V - 70 - ns Ciss Input Capacitance VGS=0V - Coss Output Capacitance VDS=25V - 890 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 340 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Min. Typ. 12280 19650 pF Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=40A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=10A, VGS=0V - 60 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 145 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP96T07AGP-HF 300 200 160 ID , Drain Current (A) ID , Drain Current (A) 250 10V 9.0V 8.0V 7.0V V GS =6.0V T C = 150 o C 10V 9.0V 8.0V 7.0V o T C = 25 C 200 V GS =6.0V 150 100 120 80 40 50 0 0 0 4 8 12 16 20 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 10 I D =40A V G =10V I D =40A T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 2.0 8 6 1.6 1.2 4 0.8 0.4 2 4 5 6 7 8 9 -50 10 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 40 I D =250uA 1.2 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP96T07AGP-HF f=1.0MHz 16000 I D = 40A V DS = 60V 10 C iss 12000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 8000 4 4000 2 0 0 0 40 80 120 160 200 1 240 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 C oss C rss 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10ms 10 100ms DC o T C =25 C Single Pulse Normalized Thermal Response (Rthjc) 1000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 1 0.01 0.1 1 10 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 200 VG ID , Drain Current (A) 160 QG 10V Limited by package 120 QGS QGD 80 40 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4