AP2309AGN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -30V RDS(ON) 75mΩ ID - 3.4A ▼ RoHS Compliant & Halogen-Free S Description SOT-23 G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 30 V +20 V 3 -3.4 A 3 -2.7 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -12 A PD@TA=25℃ Total Power Dissipation 1.38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201006212 AP2309AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-3A - - 75 mΩ VGS=-4.5V, ID=-2.6A - - 120 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-3A - 8.2 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-3A - 7 11.2 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.7 - nC VDS=-15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 19.5 - ns tf Fall Time RD=15Ω - 9 - ns Ciss Input Capacitance VGS=0V - 485 780 pF Coss Output Capacitance VDS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-3A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2309AGN-HF 20 20 T A =25 o C -10V -7.0V -6.0V -5.0V 16 -ID , Drain Current (A) 16 -ID , Drain Current (A) T A = 150 o C -10V -7.0V -6.0V -5.0V 12 8 V G = -4.0V 4 65mΩ 12 8 V G = -4.0V 4 0 0 0 1 2 3 4 5 0 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 80 I D = -2A I D = -3A V GS = -10V T A =25 o C 1.4 1.2 RDS(ON) RDS(ON) (Ω ) 70 60 1 50 0.8 0.6 40 2 4 6 8 -50 10 4 1.4 3 1.2 T j =150 o C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature Normalized -VGS(th) (V) -IS(A) Fig 3. On-Resistance v.s. Gate Voltage 2 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 1 0.8 1 2.01E+08 0.6 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2309AGN-HF f=1.0MHz 800 8 600 I D = -3A 65mΩ C (pF) -VGS , Gate to Source Voltage (V) 10 6 V DS = -24V C iss 400 4 200 2 C oss C rss 0 0 0 4 8 12 16 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 -ID (A) Operation in this area limited by RDS(ON) 100us 1 1ms 10ms 0.1 100ms 1s DC T A =25 o C Single Pulse 0.01 Normalized Thermal Response (Rthja) DUTY=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr Charge Q td(off) tf Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4