AP2327GN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -20V RDS(ON) 37mΩ ID - 5.1A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. G S The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 20 V +8 V 3 -5.1 A 3 -4.1 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -20 A PD@TA=25℃ Total Power Dissipation 1.38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient3 90 ℃/W Data and specifications subject to change without notice 1 201111081 AP2327GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage 2 Static Drain-Source On-Resistance Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-4A - 30 37 mΩ VGS=-2.5V, ID=-3A - 41 50 mΩ VGS=-1.8V, ID=-1A - 57 75 mΩ -0.3 -0.7 -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-4A - 15 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS= + 8V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-4A - 13 21 nC Qgs Gate-Source Charge VDS=-10V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC td(on) Turn-on Delay Time VDS=-10V - 10 - ns tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω - 45 - ns tf Fall Time VGS=-5V - 33 - ns Ciss Input Capacitance VGS=0V - 1050 1680 pF Coss Output Capacitance VDS=-10V - 180 pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 7.3 14.6 Ω Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-4A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2327GN-HF 25 25 -5.0V -4.5V -3.5V -2.5V -ID , Drain Current (A) 20 -5.0V -4.5V -3.5V -2.5V T A = 150 o C 20 -ID , Drain Current (A) T A =25 o C 15 V G = -1.8V 10 5 65mΩ 15 V G = -1.8V 10 5 0 0 0 2 4 6 8 10 0 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 1.6 I D = -4A V GS = -4.5V I D =-1A T A =25 o C 85 1.4 1.2 RDS(ON) RDS(ON) (mΩ ) 75 65 55 1 45 0.8 35 0.6 25 1 2 3 4 -50 5 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 2 I D = -250uA 4 T j =150 o C Normalized -VGS(th) (V) 1.6 T j =25 o C -IS(A) 3 2 1.2 0.8 0.4 1 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2327GN-HF f=1.0MHz 1300 I D = -4A V DS =-10V 1100 C iss 6 65mΩ 900 C (pF) -VGS , Gate to Source Voltage (V) 8 4 700 500 2 300 C oss C rss 100 0 0 5 10 15 20 1 25 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 10 Normalized Thermal Response (R thja) DUTY=0.5 100us Operation in this area limited by RDS(ON) 1ms 10ms 1 100ms 0.1 1s DC o T A =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Single Pulse Rthja = 270℃ ℃/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 6 V DS =-5V 5 -ID , Drain Current (A) -ID , Drain Current (A) 16 12 8 T j =150 o C 4 4 3 2 1 T j =25 o C T j =-40 o C 0 0 0 1 2 3 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 4 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4