AP2R803GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
2.8mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low □
onresistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
30
V
+20
V
Continuous Drain Current
4
75
A
Continuous Drain Current
4
75
A
300
A
104
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
Value
Units
1.2
℃/W
62.5
℃/W
1
201202153
AP2R803GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=40A
-
-
2.8
mΩ
VGS=4.5V, ID=30A
-
-
4.8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
28
45
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
5.3
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
nC
VDS=15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28
-
ns
tf
Fall Time
RD=0.5Ω
-
84
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4480
pF
Coss
Output Capacitance
VDS=25V
-
790
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
240
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
44
-
ns
dI/dt=100A/µs
-
52
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2R803GH-HF
160
300
10V
7.0 V
6.0V
5.0 V
ID , Drain Current (A)
250
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
200
150
100
10V
7 .0V
6.0V
5.0 V
120
V G =4.0V
80
40
50
0
0
0.0
1.0
2.0
3.0
0.0
4.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
4
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
3.6
3.2
2.8
1.6
1.2
0.8
2.4
0.4
2
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
30
1.2
Normalized VGS(th)
IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =25 o C
T j =150 o C
0
o
V GS , Gate-to-Source Voltage (V)
20
10
0.8
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2R803GH-HF
10
f=1.0MHz
4000
V DS =15V
V DS =18V
V DS =24V
6
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
8
2000
4
1000
C oss
2
C rss
0
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4