AP9974AGS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
▼ Lower On-resistance
D
▼ RoHS Compliant & Halogen-Free
68A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
68
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
43
A
1
IDM
Pulsed Drain Current
272
A
PD@TC=25℃
Total Power Dissipation
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
1.2
℃/W
40
℃/W
1
200905151
AP9974AGS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=45A
-
-
12
mΩ
VGS=4.5V, ID=30A
-
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
26
42
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
18
-
nC
VDS=30V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
34
-
ns
tf
Fall Time
RD=1Ω
-
93
-
ns
Ciss
Input Capacitance
VGS=0V
-
2020 3230
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
175
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
28
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9974AGS-HF
200
120
120
5.0V
ID , Drain Current (A)
o
T C = 150 C
10V
7.0V
6.0V
5.0V
100
ID , Drain Current (A)
160
10V
7.0V
6.0V
o
T C =25 C
80
V G = 4.0 V
80
V G = 4.0V
60
40
40
20
0
0
0
1
2
3
4
5
6
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
2.0
I D = 30 A
I D =45A
V G =10V
Normalized RDS(ON)
T C =25 o C
14
RDS(ON) (mΩ)
6
Fig 2. Typical Output Characteristics
16
12
10
1.6
1.2
0.8
8
0.4
2
4
6
8
10
-50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
1.2
Normalized VGS(th) (V)
50
T j =150 o C
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
30
0
o
V GS , Gate-to-Source Voltage (V)
IS(A)
4
V DS , Drain-to-Source Voltage (V)
T j =25 o C
20
10
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9974AGS-HF
10
f=1.0MHz
4000
8
3000
V DS = 30 V
V DS = 36 V
V DS = 48 V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
C iss
2000
4
1000
2
0
C oss
C rss
0
0
10
20
30
40
50
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
ID (A)
100
100us
10
1ms
o
10ms
100ms
DC
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4