AP40N03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOS FET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
21mΩ
ID
G
36A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40N03GJ)
are available for low-profile applications.
G
D
D S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
36
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
25
A
1
IDM
Pulsed Drain Current
150
A
PD@TC=25℃
Total Power Dissipation
50
W
Linear Derating Factor
0.4
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice.
1
200910094
AP40N03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=18A
-
18
21
mΩ
VGS=4.5V, ID=14A
-
24
30
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
26
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=18A
-
17
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
10
-
nC
VDS=15V
-
7.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=0.83Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
-
pF
Coss
Output Capacitance
VDS=25V
-
380
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
133
-
pF
Min.
Typ.
-
-
36
A
-
-
150
A
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode ) 1
VSD
2
Forward On Voltage
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25℃, IS=36A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40N03GH/J-HF
200
100
T C =25 o C
10V
9.0V
8.0V
7.0V
6.0V
120
80
80
ID , Drain Current (A)
160
ID , Drain Current (A)
10V
9.0V
8.0V
7.0V
6.0V
5.0V
o
T C =150 C
5.0V
60
40
4.0V
4.0V
40
V G =3.0V
20
V G =3.0V
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
32
I D =18A
T C =25 ℃
I D =18A
V G =10V
28
Normalized RDS(ON)
24
RDS(ON) (mΩ)
4.0
V DS , Drain-to-Source Voltage (V)
20
16
1.4
0.8
12
0.2
8
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
100
VGS(th) (V)
IS(A)
1.8
10
T j =25 o C
o
T j =150 C
1.6
1.4
1.2
1
1.0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40N03GH/J-HF
f=1.0MHz
1600
16
12
1200
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
8
4
800
C iss
400
C oss
C rss
0
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
Operation in this area
limited by RDS(ON)
ID (A)
100us
1ms
10
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4