AP4511GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance RDS(ON) D1 D1 ▼ Fast Switching Performance 35V 25mΩ ID ▼ RoHS Compliant & Halogen-Free SO-8 S1 G2 S2 G1 7A P-CH BVDSS Description -35V RDS(ON) 40mΩ ID -6.1A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2 D1 The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 G1 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 35 -35 V +20 +20 V Continuous Drain Current 3 7 -6.1 A Continuous Drain Current 3 5.7 -5 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 201108022 AP4511GM-HF o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 35 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - 18 25 mΩ VGS=4.5V, ID=5A - 29 37 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 9 - S IDSS Drain-Source Leakage Current VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=70oC) VDS=28V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=7A - 11 18 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=18V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=18Ω - 6 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC 2 AP4511GM-HF P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient RDS(ON) Min. Typ. -35 - - V Reference to 25℃,ID=-1mA - -0.02 - V/℃ VGS=-10V, ID=-6A - 32 40 mΩ VGS=-4.5V, ID=-4A - 50 60 mΩ VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-6A - 9 - S IDSS Drain-Source Leakage Current VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-28V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-6A - 10 16 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-18V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=18Ω - 7 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5.2 7.8 Ω Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4511GM-HF N-Channel 50 50 T A = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 4.5V 20 V G =3.0V 10 5.0V 30 4.5V 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.8 ID=5A ID=7A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 35 RDS(ON) (mΩ ) 10V 7.0V T A = 150 o C 10V 7.0V 5.0V 30 1.4 1.2 1.0 25 0.8 20 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 5 Normalized VGS(th) (V) 1.3 IS(A) 4 T j =150 o C T j =25 o C 3 2 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4511GM-HF N-Channel f=1.0MHz 1000 12 8 C (pF) VGS , Gate to Source Voltage (V) C iss I D =7A V DS =28V 10 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 1 25 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 ID (A) 10 Normalized Thermal Response (Rthja) Duty factor=0.5 10us 1ms 1 10ms 100ms T A =25 o C Single Pulse 0.1 1s DC 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG V DS =5V ID , Drain Current (A) T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4511GM-HF P-Channel 50 50 -10V -7.0V o T A = 25 C 40 40 -ID , Drain Current (A) -ID , Drain Current (A) -5.0V -4.5V 30 20 V G = - 3.0V -5.0V 30 -4.5V 20 V G = - 3.0V 10 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.4 I D =-6A V G =-10V I D = -4 A 55 T A =25 o C 1.2 Normalized RDS(ON) RDS(ON) (mΩ) -10V -7.0V o T A = 150 C 50 45 40 1.0 0.8 35 0.6 30 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized -VGS(th) (V) 5 4 -IS(A) 0 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) T j =150 o C 3 T j =25 o C 2 1.3 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4511GM-HF P-Channel 12 I D = -6 A V DS = - 28V 10 8 C (pF) -VGS , Gate to Source Voltage (V) f=1.0MHz 10000 6 C iss 1000 4 C oss 2 C rss 100 0 0 5 10 15 20 1 25 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10ms 1 100ms 1s o 0.1 T c =25 C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG 20 -4.5V QGS QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7