AP4503BGO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
S2
N-CH BVDSS
G2
S2
▼ Lower Gate Charge
RDS(ON)
D2
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S1
23mΩ
ID
G1
TSSOP-8
30V
S1
D1
6.3A
P-CH BVDSS
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-30V
RDS(ON)
35mΩ
ID
-5.2A
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
3
6.3
-5.2
A
3
5.0
-4.2
A
20
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
1.38
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201104201
AP4503BGO-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
-
23
mΩ
VGS=4.5V, ID=4A
-
-
40
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
7
11
nC
Qgs
Gate-Source Charge
VDS=15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
550
880
pF
Coss
Output Capacitance
VDS=15V
-
105
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Gate Resistance
f=1.0MHz
-
1.7
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
2
AP4503BGO-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
35
mΩ
VGS=-4.5V, ID=-3A
-
-
50
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-5A
-
14.4
23
nC
Qgs
Gate-Source Charge
VDS=-15V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
7
-
ns
tr
Rise Time
ID=-1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
36
-
ns
tf
Fall Time
VGS=-10V
-
28
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1530
pF
Coss
Output Capacitance
VDS=-15V
-
190
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Gate Resistance
f=1.0MHz
-
6
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4503BGO-HF
N-Channel
30
20
10V
7.0V
6.0V
5.0V
V G =4.0V
20
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 ℃
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
10
0
10
0
0
1
2
3
4
5
6
7
0
8
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I D =6A
V G =10V
I D = 4A
o
T A = 25 C
Normalized R DS(ON)
RDS(ON0 (mΩ)
30
25
20
1.4
1.0
15
30
-30
0.6
10
2
4
6
8
-50
10
0
50
100
150
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
7
I D =1mA
6
Normalized VGS(th) (V)
1.6
IS(A)
5
T j =25 o C
T j =150 o C
4
3
2
1.2
0.8
0.4
1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4503BGO-HF
N-Channel
f=1.0MHz
1000
8
800
ID=6A
V DS = 15 V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
C iss
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
ID (A)
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=208 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
VG
ID , Drain Current (A)
40
QG
T j =150 o C
T j =25 o C
30
4.5V
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4503BGO-HF
P-Channel
20
15
T A =25 o C
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
12
-ID , Drain Current (A)
-ID , Drain Current (A)
16
T A = 150 o C
12
8
4
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
9
6
3
0
0
0
1
2
3
4
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
40
I D = -3 A
T A =25 o C
I D = -5 A
V G = - 10V
1.6
Normalized R DS(ON)
RDS(ON) (mΩ)
35
30
1.4
1.2
1.0
25
30
0.8
-30
0.6
20
2
4
6
8
-50
10
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D = -1mA
Normalized -VGS(th) (V)
1.6
-IS(A)
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0.0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4503BGO-HF
P-Channel
10
f=1.0MHz
1600
8
1200
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -5A
V DS = -15V
6
C iss
800
4
400
2
C oss
C rss
0
0
0
8
16
24
32
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=208 oC/W
DC
0.01
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS = -5V
16
-ID , Drain Current (A)
VG
T j =25 o C
T j =150 o C
QG
-4.5V
12
QGS
QGD
8
4
Charge
Q
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7