AP62T03GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
12mΩ
ID
G
54A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
□
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
54
A
ID@TC=100℃
Continuous Drain Current
38
A
1
IDM
Pulsed Drain Current
120
A
PD@TC=25℃
Total Power Dissipation
47
W
Linear Derating Factor
0.31
W/℃
EAS
Single Pulse Avalanche Energy3
20
mJ
IAR
Avalanche Current
20
A
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200903124
AP62T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
18
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=20A
-
11.5
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
21.6
-
ns
tf
Fall Time
RD=0.75Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
750
1200
pF
Coss
Output Capacitance
VDS=25V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
144
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=20A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=20A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
21
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=20A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP62T03GH/J
100
120
T C = 175 C
80
80
60
V G =3.0V
40
ID , Drain Current (A)
ID , Drain Current (A)
100
10V
7.0V
5.0V
4.5V
o
10V
7.0V
5.0V
4.5V
o
T C =25 C
60
40
V G =3.0V
20
20
0
0
0
1
2
3
4
5
6
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
35
I D = 20 A
V G =10V
I D = 15 A
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
o
T C =25 C
25
1.2
1.0
15
0.8
5
0.6
2
4
6
8
10
-50
25
100
175
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
1.4
Normalized VGS(th) (V)
1.2
12
IS (A)
T j =175 o C
T j =25 o C
8
1
0.8
4
0.6
0.4
0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
25
100
175
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP62T03GH/J
f=1.0MHz
16
1000
I D = 20 A
12
V DS =15V
V DS =2 0 V
V DS = 25 V
8
C (pF)
VGS , Gate to Source Voltage (V)
C iss
C oss
4
C rss
100
0
0
4
8
12
16
20
24
28
1
32
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
10
1ms
10ms
100ms
DC
o
T c =25 C
Single Pulse
1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
90
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =175 o C
QG
60
4.5V
QGS
QGD
30
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4