AP75N07GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
75V
RDS(ON)
11mΩ
ID
G
80A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75N07GP)
are available for low-profile applications.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
4
Rating
Units
75
V
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
70
A
IDM
Pulsed Drain Current1
320
A
PD@TC=25℃
Total Power Dissipation
300
W
2
W/℃
450
mJ
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
5
Value
Units
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
200902235
AP75N07GS/P
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
2
Min.
Typ.
Max.
Units
75
-
-
V
-
0.08
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=40A
-
-
11
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=40A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=75V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=60V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
o
IGSS
2
Qg
Total Gate Charge
ID=40A
-
83
130
nC
Qgs
Gate-Source Charge
VDS=60V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
51
-
nC
2
td(on)
Turn-on Delay Time
VDD=40V
-
15
-
ns
tr
Rise Time
ID=30A
-
73
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
340
-
ns
tf
Fall Time
RD=1.33Ω
-
200
-
ns
Ciss
Input Capacitance
VGS=0V
-
4270
6830
pF
Coss
Output Capacitance
VDS=25V
-
690
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
320
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
Tj=25℃, IS=40A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=40A, VGS=0V
-
90
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
235
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A .
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75N07GS/P
200
280
T C = 25 o C
10V
7.0 V
5.0V
4.5V
10V
7.0 V
5.0V
4.5V
o
T C = 175 C
160
ID , Drain Current (A)
ID , Drain Current (A)
240
200
160
120
120
V G =3.0V
80
V G =3.0V
80
40
40
0
0
0
3
6
9
0
12
Fig 1. Typical Output Characteristics
6
9
12
15
Fig 2. Typical Output Characteristics
2.4
20
I D =20A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ)
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
16
1.6
1.2
12
0.8
8
0.4
2
4
6
8
10
25
V GS Gate-to-Source Voltage (V)
100
125
150
175
o
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
13
15
12
RDS(ON) (mΩ)
20
IS(A)
75
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =175 o C
50
T j =25 o C
10
5
V GS =4.5V
11
V GS =10V
10
0
9
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP75N07GS/P
f=1.0MHz
14
10000
C iss
ID=40A
10
V DS = 4 0 V
V DS = 48 V
V DS = 60 V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
1000
6
C oss
4
C rss
2
100
0
0
40
80
120
160
1
200
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
100
1ms
10ms
10
100ms
DC
o
T C =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
SINGLE PULSE
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
ID , Drain Current (A)
V DS =5V
o
T j =25 C
T j =175 o C
VG
QG
80
4.5V
QGS
QGD
40
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4