AP95T10AGW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
100V
RDS(ON)
6mΩ
ID
150A
S
Description
AP95T10A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage
applications such as SMPS.
G
D
TO-3P
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
150
A
ID@TC=25℃
Continuous Drain Current, V GS @ 10V3
120
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
95
A
480
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
277.8
W
PD@TA=25℃
Total Power Dissipation
3.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.45
℃/W
40
℃/W
1
201209121
AP95T10AGW-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=60A
-
-
6
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
170
270
nC
Qgs
Gate-Source Charge
VDS=80V
-
30
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
78
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
130
-
ns
tr
Rise Time
ID=40A
-
250
-
ns
td(off)
Turn-off Delay Time
RG=25Ω
-
360
-
ns
tf
Fall Time
VGS=10V
-
270
-
ns
Ciss
Input Capacitance
VGS=0V
-
9060 14500
pF
Coss
Output Capacitance
VDS=25V
-
830
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
430
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
4.2
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
270
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T10AGW-HF
320
200
T C = 150 C
160
ID , Drain Current (A)
ID , Drain Current (A)
10V
8.0V
7.0V
6.0V
o
10V
8.0V
7.0V
o
T C = 25 C
240
6.0V
160
120
V GS =5.0V
80
80
40
V GS =5.0V
0
0
0
4
8
12
16
20
24
28
0
Fig 1. Typical Output Characteristics
8
12
16
Fig 2. Typical Output Characteristics
2.6
1.6
I D =1mA
I D =60A
V G =10V
2.2
Normalized RDS(ON)
1.4
Normalized BVDSS (V)
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.2
1
0.8
0.6
1.8
1.4
1.0
0.6
0.4
0.2
-50
0
50
100
150
-50
0
o
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
60
I D =1mA
Normalized VGS(th) (V)
50
IS(A)
40
T j =150 o C
T j =25 o C
30
20
1.2
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T10AGW-HF
12
f=1.0MHz
12000
V DS =50V
V DS =60V
V DS =80V
10
10000
C iss
8000
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
6
6000
4
4000
2
2000
C oss
C rss
0
0
0
40
80
120
160
1
200
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
o
T c =25 C
Single Pulse
1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4