AP9435GG-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristic
▼ Single Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 4.2A
S
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
+20
V
3
- 4.2
A
3
-3.4
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
-20
A
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
100
℃/W
1
201010053
AP9435GG-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-4A
-
-
50
mΩ
VGS=-4.5V, ID=-2A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-4A
-
4
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-4A
-
8
16
nC
VGS(th)
Gate Threshold Voltage
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-15V
-
6.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7.7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=15Ω
-
9.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
830
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-1A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9435GG-HF
20
20
o
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
16
12
8
0
10
V G =-3.0V
0
0
2
4
6
0
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
160
I D =-2A
T A =25 ℃
I D = -4 A
V G =-10V
Normalized RDS(ON)
140
120
RDS(ON) (mΩ)
15
5
V G =-3.0V
4
-10V
-7.0V
-5.0V
-4.5V
T A =150 o C
-ID , Drain Current (A)
T A =25 C
100
80
1.4
1.0
60
40
0.6
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.6
Normalized -VGS(th) (V)
1.4
3
-IS(A)
o
o
T j =150 C
T j =25 C
2
1.2
1.0
0.8
1
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9435GG-HF
f=1.0MHz
1000
C iss
9
I D =- 4 A
V DS =- 24 V
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
3
10
0
0
4
8
12
16
1
20
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
10
Operation in this
area limited by
RDS(ON)
-ID(A)
13
-V DS , Drain-to-Source Voltage (V)
100us
1ms
1
10ms
100ms
1s
10s
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + Ta
0.01
Rthja=100 oC/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4