AP9770GT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Through Hole Type BVDSS -60V RDS(ON) 500mΩ ID ▼ RoHS Compliant & Halogen-Free G -1.5A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The TO-92 package is widely used for all commercial-industrial applications. S G TO-92 (S-type) D Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V ID@TL=25℃ Continuous Drain Current, VGS @ 10V -1.5 A ID@TL=100℃ Continuous Drain Current, VGS @ 10V -1.2 A -6 A 1 IDM Pulsed Drain Current PD@TL=25℃ Total Power Dissipation 2.08 W PD@TA=25℃ Total Power Dissipation 0.83 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-l Maximum Thermal Resistance, Junction-lead 60 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W Data and specifications subject to change without notice 1 200908211 AP9770GT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-0.8A - - 500 mΩ VGS=-4.5V, ID=-0.6A - - 800 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-0.8A - 3.3 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-1A - 6.8 11 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.2 - nC VDS=-30V - 8.4 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 5.4 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 23 - ns tf Fall Time RD=30Ω - 5 - ns Ciss Input Capacitance VGS=0V - 560 900 pF Coss Output Capacitance VDS=-25V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 6.5 - Ω Min. Typ. IS=-0.6A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-1A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 42 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9770GT-HF 4 5 -ID , Drain Current (A) 4 3 2 -10V -7.0V -6.0V -5.0V V G = -4.0V T C =150 o C -ID , Drain Current (A) -10V - 7 .0V - 6 .0V - 5.0 V V G = - 4 .0 V T C = 25 o C 3 2 1 1 0 0 0 1 2 3 0 4 Fig 1. Typical Output Characteristics 2 3 4 Fig 2. Typical Output Characteristics 260 2.4 I D = - 0.8 A V G = -10V I D = -0.6 A o T C =25 C 2.0 Normalized RDS(ON) 240 RDS(ON) (mΩ ) 1 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 220 200 1.6 1.2 0.8 180 0.4 160 2 4 6 8 -50 10 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 1.4 5 1.2 Normalized -VGS(th) (V) -IS(A) 4 3 T j =150 o C T j =25 o C 2 1.0 0.8 0.6 1 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9770GT-HF f=1.0MHz 10 1000 -VGS , Gate to Source Voltage (V) V DS = - 48 V ID= -1A 8 C (pF) 800 6 600 C iss 4 400 2 200 0 0 0 4 8 12 C oss C rss 1 16 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 Operation in this area limited by RDS(ON) Normalized Thermal Response (RthjL) 1 100us -ID (A) 1 1ms 10ms 100ms 0 1s DC T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x RthjL + T L Single Pulse 0.01 0 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4