BLV859 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG(C) .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 10 dB at 150 W/860 MHz • Omnigold™ Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS J 15 A IC K DIM MIN IMUM inches / m m MAXIMUM inches / m m A .220 / 5.59 .230 / 5.84 28 V B C .120 / 3.05 VCBO 60 V D .380 / 9.65 .390 / 9.91 E .780 / 19.81 .820 / 20.83 VEBO 2.5 V VCEO PDISS 145 W @ TC = 25 °C -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 1.20 °C/W CHARACTERISTICS .130 / 3.30 F .435 / 11.05 G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 .205 / 5.21 L TC = 25 °C NONETEST CONDITIONS SYMBOL .210 / 5.33 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 30 mA 60 V BVCEO IC = 60 mA 28 V BVEBO IE = 1.2 mA 2.5 V ICBO VCB = 27 V 3.0 mA ICEO VCE = 20 V 6.0 mA hFE VCE = 25 V 140 --- COB VCB = 26 V PG IMD1 VCC = 25 V POUT = 20 W VSRW IC = 2.25 A 30 f = 1.0 MHz ICQ = 2 X 2.25 A f = 860 MHz VCC = 25 V ICQ = 2 X 2.25 A VSWR = 50:1 @ all phase angles POUT = 20 W PEP 75 pF 10 -54 No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB dBc REV. B 1/1