BLV30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV30 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 10 dB at 2.0 W/860 MHz • Omnigold™ Metalization System S B S G C D J E MAXIMUM RATINGS IC 1.5 A VCBO 60 V VCEO VEBO I F G H K #8-32 UNC DIM MINIMUM inches / mm inches / mm 30 V A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 4.0 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 O PDISS 15.9 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 10 C/W O O .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I O .137 / 3.48 .572 / 14.53 F G O MAXIMUM J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 60 V BVCEO IC = 50 mA 30 V BVEBO IE = 4.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 25 V COB VCB = 28 V PG IMD1 VCE = 25 V POUT = 2.0 W IC = 500 mA 15 f = 1.0 MHz IC = 410 mA f = 860 MHz 10 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 4.0 mA 120 --- 10 pF dB dBc REV. A 1/1