ASMT-Mx00 MoonstoneTM 1 W Power LED Light Source Data Sheet Description Features The Moonstone 1W Power LED Light Source is a high performance energy efficient device which can handle high thermal and high driving current. The exposed pad design has excellent heat transfer from the package to the motherboard. TM The low profile package design is suitable for a wide variety of applications especially where height is a constraint. The package is compatible with reflow soldering process. This will give more freedom and flexibility to the light source designer. Applications • Available in Red, Amber, Green, and Blue color. • Energy efficient • Exposed pad for excellent heat transfer • Suitable for reflow soldering process • High current operation • Long operation life • Wide viewing angle • Silicone encapsulation • ESD Class HBM Class 3B (threshold > 8 kV) • MSL 2A for InGaN products • MSL 4 for AlInGaP products • Portable (flash light, bicycle head light) Specifications • Reading light • AllnGaP technology for Red and Amber • Architectural lighting • Garden lighting • Decorative lighting • 2.1V (typ) at 350mA for AllnGaP • InGaN technology for Green and Blue • 3.2V (typ) at 350mA for InGaN Package Dimensions 10.00 1 Anode 2 Cathode 3 Heat Sink 3.30 8.50 1.27 Metal Slug 3 Ø 5.26 LED 10.60 8.50 + − Ø 8.00 2.00 ZENER 5.25 1.30 2 1 5.08 0.81 Notes: 1. All dimensions are in millimeters. 2. Tolerance is ±0.1 mm unless otherwise specified. 3. Metal slug is connected to anode for electrically non-isolated option. Device Selection Guide ( Tj = 25°C) Luminous Flux, fV[1,2] (lm) Part Number Color Min. Typ. Max. Test Current (mA) Dice Technology ASMT-MR00-AGH00 Red 25.5 35.0 43.0 350 AlInGaP 33.0 40.0 56.0 350 AlInGaP ASMT-MR00-AHJ00 ASMT-MA00-AGH00 Amber 25.5 35.0 43.0 350 AlInGaP ASMT-MG00 Green 43.0 60.0 73.0 350 InGaN ASMT-MB00 Blue 11.5 15.0 25.5 350 InGaN Notes 1. fV is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition. 2. Flux tolerance is ± 10%. 2 Part Numbering System ASMT-M x xx – x x1 x2 x3 x4 Packaging Option Color Bin Selection Maximum Flux Bin Selection Minimum Flux Bin Selection Dice Type N – InGaN A – AllnGaP Silicone Type 00 – Non-diffused B1 – Diffused Color R – Red A – Amber G - Green B - Blue Note: 1. Please refer to Page 8 for selection details. Absolute Maximum Ratings (TA = 25°C) Parameter ASMT-Mx00/ Units DC Forward Current [1] 350 mA Peak Pulsing Current 1000 mA Power Dissipation for AllnGaP 805 mW Power Dissipation for InGaN 1225 mW LED Junction Temperature for AllnGaP 125 °C LED Junction Temperature for InGaN 110 °C Operating Ambient Temperature Range -40 to +100 °C Storage Temperature Range -40 to +120 °C Reverse Volttage Not recommended [3] [2] Notes: 1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN. 2. Pulse condition duty factor = 10%, Frequency = 1kHz. 3. Not recommended for reverse bias operation. 3 Optical Characteristics at 350 mA (TJ = 25°C) Peak Wavelength, λPEAK (nm) Dominant Wavelength, λD [1] (nm) Viewing Angle, 2θ½ [2] (°) Luminous Efficiency (lm/W) Part Number Color Typ Typ Typ Typ ASMT-MR00-AGH00 Red 635 625 120 48 ASMT-MR00-AHJ00 Red 635 625 120 54 ASMT-MA00-AGH00 Amber 598 590 120 48 ASMT-MG00 Green 519 525 120 54 ASMT-MB00 Blue 454 460 120 13 Electrical Characteristic at 350 mA (TJ = 25°C) Forward Voltage VF (Volts) at IF = 350mA Thermal Resistance Rθ j-ms ( °C/W) [1] Dice type Min. Typ. Max. Typ. AllnGaP 1.7 2.1 2.3 12 InGaN 2.8 3.2 3.5 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 380 RED AMBER FORWARD CURRENT - mA RELATIVE INTENSITY Notes: 1. Rθ j-ms is Thermal Resistance from LED junction to metal slug. 430 480 530 580 630 WAVELENGTH - nm 680 730 780 Figure 1. Relative Intensity vs. Wavelength for AlInGaP 1.0 RELATIVE INTENSITY RELATIVE LUMINOUS FLUX (v) - lm 1.2 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 400 MONO PULSE CURRENT - mA 450 500 Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AlInGaP 4 0 0.5 1 1.5 2 FORWARD VOLTAGE - V 2.5 3 Figure 2. Forward Current vs Forward Voltage for AlInGaP 1.4 0.0 500 450 400 350 300 250 200 150 100 50 0 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -90 -70 -50 -30 -10 10 30 OFF-AXIS ANGLE(°) Figure 4. Radiation Pattern for AlInGaP 50 70 90 2 RELATIVE LOP (Normalized at 25°C) I F - MAX FORWARD CURRENT - mA 400 350 R JA = 60°C/W 300 R JA = 50°C/W 250 R JA = 40°C/W 200 150 100 50 0 0 10 20 30 40 50 60 T A - AMBIENT TEMPERATURE - °C 70 80 GREEN BLUE 430 480 530 580 630 WAVELENGTH - nm 680 730 780 Figure 7. Relative Intensity vs. Wavelength for InGaN 1.0 RELATIVE INTENSITY RELATIVE LUMINOUS FLUX (φV) - lm 1.2 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 400 450 500 MONO PULSE CURRENT - mA Figure 9. Relative Luminous Flux vs Mono Pulse Current for InGaN 5 0.5 5 20 35 50 65 80 JUNCTION TEMPERATURE - °C 95 110 125 500 450 400 350 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE - V 3 3.5 4 Figure 8. Forward Current vs. Forward Voltage for InGaN 1.4 0.0 1 Figure 6. Relative LOP (Normalized at 25°C) vs. junction temperature for AlInGaP FORWARD CURRENT - mA RELATIVE INTENSITY 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 380 1.5 0 -40 -25 -10 90 Figure 5. Maximum forward current vs. ambient temperature for AlInGaP Derated based on TJMAX = 125°C, RθJA = 40°C/W / 50°C/W and 60°C/W RED AMBER 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -90 GREEN BLUE -70 -50 -30 -10 10 30 OFF-AXIS ANGLE (°) Figure 10. Radiation Pattern for InGaN 50 70 90 540 350 530 DOMINANT WAVELENGTH – nm I F – MAXIMUM FORWARD CURRENT – mA 400 RθJA = 50 C/W 300 RθJA = 40 C/W 250 200 RθJA = 30 C/W 150 100 50 0 0 10 20 30 40 50 60 70 T A – AMBIENT TEMPERATURE – °C 80 Figure 11. Maximum Forward Current vs. Ambient Temperature for InGaN Derated based on TJMAX = 110°C, RθJA = 30°C/W, 40°C/W and 50°C/W 520 510 500 490 480 BLUE 470 460 450 100 90 GREEN 150 200 250 300 FORWARD CURRENT – mA 350 400 Figure 12. Dominant wavelength vs. forward current – InGaN devices 10.70 ± 0.10 TEMPERATURE 10 - 30 SEC. 217 °C 200 °C 255 - 260 °C 3 °C/SEC. MAX. 8.40 ± 0.10 -6 °C/SEC. MAX. 17.00 ± 0.20 150 °C 3 °C/SEC. MAX. 1.00 ± 0.10 60 - 120 SEC. 100 SEC. MAX. 3.1 ± 0.10 TIME 5.08 ± 0.10 (Acc. to J-STD-020C) 300 250 200 150 100 50 0 -50 -100 -150 -200 -250 -300 -40 Figure 14. Recommended soldering land pattern 100 90 80 70 60 50 40 30 20 10 0 RELATIVE LOP (%) RELATIVE FORWARD VOLTAGE SHIFT (mV) Figure 13. Recommended reflow soldering profile -15 10 35 TEMPERATURE - °C Figure 15. Temperature vs. relative forward voltage shift 60 85 GREEN BLUE 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100105110 JUNCTION TEMPERATURE (°C) Figure 16. Relative LOP vs Junction Temperature for InGaN Devices Note: For detail information on reflow soldering of Avago surface mount LEDs, do refer to Avago Application Note AN1060 Surface Mounting SMT LED Indicator Components. 6 Option Selection Details ASMT-Mxxx – x x1 x2 x3 x4 x1 – Minimum Flux Bin Selection x2 – Maximum Flux Bin Selection x3 – Color Bin Selection x4 – Packaging Option Flux Bin Limit [x1 x2] Bin Luminous Flux (lm) at IF = 350mA Min. Max. D 11.5 15.0 E 15.0 19.5 F 19.5 25.5 G 25.5 33.0 H 33.0 43.0 J 43.0 56.0 K 56.0 73.0 Tolerance for each bin limits is ±10% Color Bin Selection [x3] Individual reel will contain parts from one full bin only. Color Bin Limits Other Colors 0 Full Distribution Color Bin Min. Max. Z A and B Red Full Distribution 620.0 635.0 Y B and C Amber A 582.0 584.5 W C and D B 584.5 587.0 V D and E C 587.0 589.5 Q A, B and C D 589.5 592.0 P B, C and D E 592.0 594.5 N C, D and E A 455.0 460.0 B 460.0 465.0 C 465.0 470.0 D 470.0 475.0 A 515.0 520.0 B 520.0 525.0 C 525.0 530.0 D 530.0 535.0 Blue Green Tolerance: ± 1 nm 7 Example Packaging option [x4] Selection Option ASMT-MR00-AHJ00 0 Tube 1 Tape & Reel ASMT-MR00-Axxxx – AllnGaP Red, Non-diffused x1 = H – Minimum Flux Bin H x2 = J – Maximum Flux Bin J x3 = 0 – Full Distribution x4 = 0 – Tube Option Packing Tube - Option 0 5.39 10.3 37.00 6.5 20.85 11.00 10.95 6.3 8.3 535.00 SIDE VIEW TOP VIEW Figure 17. Tube dimensions Tape & Reel - Option 1 Tape Dimension B Bo W F E A 2.5 B A Ko P SECTION A Ao SECTION B Figure 18. Carrier tape dimensions Dim Value A0 8.80±0.10 B0 16.45±0.10 K0 3.60±0.10 W 24.0±0.10 P 16.0±0.10 Qty/Reel 250EA Unit: mm Tape & Reel - Option 1 (Cont.) Tape Dimension END START THERE SHALL BE A MINIMUM OF 160 mm OF EMPTY COMPONENT POCKETS SEALED WITH COVER TAPE. MOUNTED WITH COMPONENTS THERE SHALL BE A MINIMUM OF 390 mm OF EMPTY COMPONENT POCKETS SEALED WITH COVER TAPE. Figure 19. Carrier tape leader and trailer dimensions Reel Dimensions +1.00 24.0 −0.00 2.30 2.30 0 2.50 ± 0.50 0º 60. ∅99.50 ± 1.00 R10.0 ± .50 ∅268.00 R10 ∅13.50 ∅330.00 ± 1.00 Figure 20. Reel dimensions 0 0.5 120.0º ± 0.50 Handling Precaution The encapsulation material of the product is made of silicone for better reliability of the product. As silicone is a soft material, please do not press on the silicone or poke a sharp object onto the silicone. These might damage the product and cause premature failure. During assembly or handling, the unit should be held on the body only. Please refer to Avago Application Note AN5288 for detail information. B. Control after opening the MBB Moisture Sensitivity C. Control for unfinished reel This product is qualified as Moisture Sensitive Level 2a for InGaN devices and MSL 4 for AlInGaP devices per Jedec J-STD-020. Precautions when handling this moisture sensitive product is important to ensure the reliability of the product. Do refer to Avago Application Note AN5305 Handling of Moisture Sensitive Surface Mount Devices for details. A. Storage before use • Unopen moisture barrier bag (MBB) can be stored at <40°C/90%RH for 12 months. If the actual shelf life has exceeded 12 months and the humidity indicator card (HIC) indicates that baking is not required, then it is safe to reflow the LEDs per the original MSL rating. • It is not recommended to open the MBB prior to assembly (e.g. for IQC). • The humidity indicator card (HIC) shall be read immediately upon opening of MBB. • The LEDs must be kept at <30°C/60%RH at all time and all high temperature related process including soldering, curing or rework need to be completed within 672 hours for MSL 2a and 72 hours for MSL 4. • For any unused LEDs, they need to be stored in sealed MBB with desiccant or desiccator at <5%RH. D. Control of assembly boards • If the PCB soldered with the LEDs is to be subjected to other high temperature processes, the PCB need to be stored in sealed MBB with desiccant or desiccator at <5%RH to ensure no LEDs have exceeded their floor life of 672 hours for MSL 2a and 72 hours for MSL 4. E. Baking is required if • HIC “10%” indicator is not blue and “5%” indicator is pink. - The LEDs are exposed to condition of >30°C/60% RH at any time. • The LEDs floor life exceeded 672 hours for MSL 2a and 72 hours for MSL 4. Recommended baking condition: 60±5ºC for 20hrs. DISCLAIMER AVAGO’S PRODUCTS AND SOFTWARE ARE NOT SPECIFICALLY DESIGNED, MANUFACTURED OR AUTHORIZED FOR SALE AS PARTS, COMPONENTS OR ASSEMBLIES FOR THE PLANNING, CONSTRUCTION, MAINTENANCE OR DIRECT OPERATION OF A NUCLEAR FACILITY OR FOR USE IN MEDICAL DEVICES OR APPLICATIONS. CUSTOMER IS SOLELY RESPONSIBLE, AND WAIVES ALL RIGHTS TO MAKE CLAIMS AGAINST AVAGO OR ITS SUPPLIERS, FOR ALL LOSS, DAMAGE, EXPENSE OR LIABILITY IN CONNECTION WITH SUCH USE. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0668EN AV02-0129EN - December 10, 2012