BELLING BL7448SM

BL7448SM Intelligent 8K-bit
EEPROM
Description
BL7448SM is an IC Card chip (module) made
by 0.35um CMOS EERPOM process. It has
1024 byte EEPROM with logical encryption
and function.
Figure 1
Features
•
•
•
•
•
•
•
•
•
1024 x 8 bit EEPROM organization
Byte-wise addressing
Irreversible byte-wise write protection of every Byte
1024 x1 bit organization of protection memory
Serial three-wire link
End of processing indicated at data output
Minimum of 100,000 write/erase cycles
Data retention time :>10 years
Contacts configuration and serial interface according to ISO 7816 standard
(synchronous transmission)
Data can only be changed after entry of the correct 2-byte
Programmable security code
Pin Description
Pin No.
1
2
3
4
5
6
7
8
Parameter
C1
C2
C3
C4
C5
C6
C7
C8
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Symbol
Vdd
RST
CLK
N.C.
GND
NC
I/O
NC
-1Total 7 Pages
Function Description
Supply Voltage
Reset signal
Clock input
Not connected
Ground
Not connected
Bidirectional data line (open drain)
Not connected
8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
Function Description
Block Diagram
Figure 2
The BL7448SM consists of 1024 x 8 bit EEPROM main memory and a 1024-bit protection-memory
With PROM functionality .The main memory can be irreversibly protected against data change by writing the
corresponding bit in the protection memory. Once written the protection bit cannot be erased. The main
memory is erased and written byte by byte. Normally a data change consists of an erase and write
procedure. It depends on the contents of the data byte in the main memory and the new data byte whether
the EEPROM is really erased and/or written. If none of the 8 bits in the addressed byte requires a zero-toone transition the erase access will be suppressed. Vice versa the write access will be suppressed if no oneto-zero transition is necessary.
Additionally to the above functions the BL7448SM provides a security code logic, which
controls the write/erase access to the memory. For this purpose, the BL7448SM contains a 3byte security memory with an error counter EC and 2 bytes reference data. These 2 bytes as a
whole are called programmable security code (PSC). After power on the whole memory, except
for the reference data, the memory can only be read. (The value of PSC is “00”)Writing and
erasing is only possible after a successful comparison of verification data with the internal
reference data.
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8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
After eight successive unsuccessful comparisons the error counter blocks any subsequent
attempt, and hence any possibility to write and erase.
Reset and Answer-to-Reset
*Reset
After connecting the operating voltage to Vcc, the chip will hold and wait the operation of reset. The
operation of reset begins with RST from L to H, and ends with CLK from L to H. During the operation of
reset, all commands will be ignored.
After power on reset, the operation of reading must be execute before data can be altered.
.
*Answer-to-Reset
Answer-to-Reset set the address counter to zero and output the first data. The other data can be read
with CLK signal.
Command
RST
RST
1
0
I/O
Command Input
Data Output
Command
Byte2
Address
Byte1
A8
A9
Byte3
Data
A0~A7
Operation
S0
S1
S2
S3
S4
S5
1
0
0
0
1
1
Data
1
1
0
0
1
1
Data
0
0
0
0
1
1
Comp. data
0
0
1
1
0
0
No effect
0
1
1
1
0
0
No effect
Mode
D0~D7
Updata main
memory
& protection memory
Updata main
memory
Write protection
memory
Read main memory
& protection memory
Read main memory
Processing
Processing
Processing
Data Output
Data Output
VCC
RST
1
CLK
I/O
RST
2
1
td4
2
31
3
td2
td4
CLK
3
31
tH
IC sets I/O
to State H
32
32
tL
td5
I/O
Figure 3 Reset and Answer-to-Reset
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8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
0
1
2
3
5
4
6
7
0
1
2
3
4
5
6
7
0
2
1
3
4
5
6
S0 S1 S2 S3 S4 S5 A8 A9 A0 A1 A2 A3 A4 A5 A6 A7 D0 D1 D2 D3 D4 D5 D6 D7
Bute 1
Control Byte
Bute 3
Data
Bute 2
Address
Figure 4 Command Input
Command Mode
Write/Erase Operation
Write/Erase, except for protection-memory
Note: Write means from H to L, Erase means from L to H
There are three kinds of Write/Erase operations:
Erase and Write (The number of clock pulses=203, frequency <=20KHZ)
Write only: means the 8 bits in the addressed byte from H to L( The number of clock pulses =103,
frequency <=20KHZ)
Erase only(=FF; The number of clock pulses =103, frequency <= 20KHZ)
Write/Erase, include protection-memory
As shipped, the protection-memory has been erased, it can be written only once.
Write protection-memory and compare data
When comparison of the entered data byte is same as the assigned byte in the EEPROM. the
protection-memory is written.
After sent a certain CLK, the command of Write/Erase will be over. After operation, the state of I/O pin
will be changed from H to L.
The I/O state can be changed when RST change from L to H.
Processing
Command Input
RES
CLK
0
23
0
1
2
99
TE
102
199
202
TW
E/W
Internal signal
I/O
S0 S1
D6 D7
Figure 5 Erase and Write timing
Processing
Command Input
RES
CLK
0
23
0
1
2
99
TE
102
199
202
TW
E/W
Internal signal
I/O
S0 S1
D6 D7
Figure 6 Only Write or Erase
Read operation
Read main memory (See Figure 7)
This operation don’t read the protection-memory. After 8 CLK, the address of memory will be increased
by additional pulse .
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8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
Read main memory and protection-memory (See Figure 8)
After input this command, the next 8 CLK will read out 8 bits data; the ninth CLK will read out the
content of protection-memory. After 9 CLK, the address of memory will be increased by additional
pulse.
Security code verification
Byte1
Byte2
Address
Byte3
Address
Operation
0
1
0
0
1
1
1
1
253
Bit mask
1
0
1
1
0
0
1
1
254
PSC byte1
1
0
1
1
0
0
1
1
255
PSC byte2
Write error
counter
Verification 1st
PSC byte
nd
Verification 2
PSC byte
Mode
Processing
Processing
Processing
Command
Input
DataOutput
RST
CLK
A8 A9
I/O
D6 D7
random
value
StartingAddress
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
StartingAddress
0 1 2 3 4 5 6 7
StartingAddress+1
StartingAddress+n
Figure 7 Read main memory
Data
CommandInput
Output
RST
CLK
23
0
I/O
A8 A9
StartingAddress
D6 D7
random
value
0 1 2 3 4 5 6 7 P0 0 1 2 3 4 5 6 7 P0
StartingAddress
P0 0 1 2 3 4 5 6 7 P0
StartingAddress+1
StartingAddress+n
Figure 8 read main memory and protection-memory
Security code verification
User verification operation
BL7448SM only can read when the security code verification is unsuccessful. The content of security code
cannot be read out. If you try to read security code, you only can get “00”
The processing is:
*Write a bit of EC(the bit is not written before), the address of EC is “1021”
*Input the first byte of PSC, the address is “1022”
*Input the second byte of PSC, the address is “1023”
*If the security verification is successful , the EC can be erased.
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8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
After security code identification , I/O will be changed from H to L. I/O will return to H when RST change
from L to H. EC cannot be erased automatically.
Write Error Counter (EC)
Before security code identification, only Error Counter (EC) can be written. A number of erased bit of EC
means what times EC can be written. After security code verification is successful, EC should be erased
before power off. After security code verification is unsuccessful, if it is verified again, EC must be written.
Input PSC
PSC input start from lowest bit of low byte to high byte. If comparison of data is right, EEPROM can be
written or erased before power-off and the corresponding protection bit of PSC is H, PSC can be changed.
Write EC
No
compare
fobidden
EC write
Enable?
Yes
compare 1st PSC
Byte
No
compare
failed
OK?
Yes
compare 2nd PSC
Byte
No
compare
Failed
OK?
Yes
Password
Verification
OK,Erase EC->FF
Figure 9 Verification Procedure
Data
CommandInput
Output
RST
CLK
23
0
I/O
A8 A9
StartingAddress
D6 D7
random
value
0 1 2 3 4 5 6 7 P0 0 1 2 3 4 5 6 7 P0
StartingAddress
StartingAddress+1
P0 0 1 2 3 4 5 6 7 P0
StartingAddress+n
Figure 10. PSC Verification timing
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-6Total 7 Pages
8/16/2006
BL7448SM Intelligent 8K-bit
EEPROM
Electrical Parameter
•
Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage (any pin)
Storage temperature
Power comsumption
Operation temperature
•
VCC
VI
TS
PT
Ta
min.
-0.3
-0.3
-40
0
-35
Limit Values
typ.
Max
6.0
6.0
125
60
70
Unit
V
V
℃
mw
℃
DC Characteristics
Parameter
Supply voltage
Supply current
High-level input voltage
(I/O,CLK,RST)
Low-level input voltage
(I/O,CLK,RST)
High-level input current
(I/O,CLK,RST)
Low-level output current
VOL =0.4V,open drain
High-level leakage
current
VOH = VCC,open drain
Input capacitance
•
Symbol
Symbol
VCC
ICC
min.
3.0
Limit Values
typ.
Max
5.0
5.5
3
10
Unit
V
mA
VIH
0.7VCC
-
VCC +0.3
V
VIL
VGND0.2
-
0.15VGND
V
IH
-
-
50
uA
IOL
0.5
-
-
mA
IOH
-
-
50
A
CI
-
-
10
 pF
AC Characteristics
Parameter
Symbol
Clock frequency
Clock high period
Clock low period
Setup time data
Delay time
Clock setup time for RST
RST setup time for clock
Hold time data
Eraser time
Write time
CLK
tH
tL
td1
td2
td3
td4
td5
TER
tWR
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min.
Limit Values
typ.
Max
20
10
10
4
6
4
4
4
5
5
-7Total 7 Pages
Unit
kHz
µs
µs
µs
µs
µs
µs
µs
ms
ms
8/16/2006