PRELIMINARY INFORMATION - MAY 29, 2012 Features General Description ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ The E522.01/02/03/04/05/06/07/08/09 product family provides ultra low quiescent current step down DC/DC converters with integrated power MOSFET. The PFM (Pulse Frequency Modulation) regulator allows outstanding fast line- and load response time, stability and high efficiency over the full load current range. The integrated idle detection assures an ultra low idle current and high efficiency with low load currents down to <100µA for the completely powered application. A power-good signal is provided by a high-voltage opendrain low-side switch. The E522.0x buck converter accommodates to common single supply micro controller applications. Low external component count and small QFN20L4 / TSSOP16 package allow compact PCB designs. Wide input voltage range 4.5V to 40V PFM regulator up to 1.33MHz Up to >92% efficiency Very low 8µA sleep mode current Ultra low 12µA standby current 100% duty cycle capability Small QFN20L4 lead-less package TSSOP16 package AEC-Q100 qualification Junction temperature range -40°C to +150°C Applications ÿÿ ÿÿ ÿÿ ÿÿ Micro Controller Systems Automotive Telematics, Dashboards Partial Networking Peripheral Control Systems Ordering Information VOUT E522.01 5V 500mA -40°C to +125°C E522.06 E522.02 3.3V 500mA -40°C to +125°C E522.07 E522.03 5V 350mA -40°C to +125°C E522.04 3.3V 350mA -40°C to +125°C E522.05 IOUT Ambient Temp. Range Product ID 1.5 to 40V 500mA -40°C to +125°C IN Product ID IOUT Ambient Temp. Range 1.5 to 40V 350mA -40°C to +125°C 5V 1A -40°C to +125°C E522.08 3.3V 1A -40°C to +125°C E522.09 1.5 to 40V 1A -40°C to +125°C Ordering information continued at the end of this document. VIN CIN VOUT Feedback for E522.05/06/09 CSENSE PGOOD ON ON PG RSENSE2 SENSE E522.0x RSENSE1 LLXT LXT D OCP OUT COUT R AGND PGND This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 1/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT PFM STEP DOWN CONVERTERS E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 1 Functional Diagram IDLE OCP Resistor Driver OCP VIN Internal Driver Transistor LXT OC OFF DRIVER VIN OVT Internal Supply ON PFM Controller ENABLE IDLE Detector ACTIVE IDLE PGOOD SENSE Power Good Comparator VOUT Comparator E522.0X SENSE AGND PGND Figure 1: Block diagram 2 Pinout 3 NC 4 PGOOD 5 NC NC E522.0x AGND 6 7 8 9 LXT 14 PGND 13 NC 12 SENSE 11 SENSE 10 QFN20L4 NC 1 16 NC VIN 2 15 LXT 14 NC 13 PGND 12 SENSE NC 3 ON 4 NC 5 PGOOD 6 11 NC NC 7 10 NC AGND 8 9 E522.0x ON 15 OCP 2 16 NC NC 17 21 NC 1 NC VIN 19 18 NC 20 NC NC 2.1 Pin Configuration QFN20L4 / TSSOP16 OCP TSSOP16 Figure 2: Package pinout, transparent top view, not to scale. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 2/24 QM-No.: 25DS0064E.01 2.2 Pin Description Table 1: Pin Description Pin QFN20L4 TSSOP16 Name Type 1) 1 2 VIN HV S 2 1 NC - 3 4 ON HV AI 4 3 NC - Description Remark bypass to GND with a low ESR capacitance >20µF High-Voltage Supply input Not connected Open or GND High-Voltage input to enable converter Not connected Open or GND High-Voltage capable low-side open-drain output for power good flag 5 6 PGOOD HV AO 6 8 AGND S Signal ground connection 7 5 NC - Not connected Open or GND 8 7 NC - Not connected Open or GND 9 10 NC - Not connected Open or GND 10 9 OCP AI Over-current protection resistor input, connect to ground via resistor 11 - SENSE AI Feedback input for converter regulation, connect to output voltage Redundant, connect both SENSE pins 12 12 SENSE AI Feedback input for converter regulation, connect to output voltage Redundant, connect both SENSE pins 13 11 NC - Not connected 14 13 PGND S Power ground connection 15 15 LXT HV AO 16 14 NC - Not connected Open or GND 17 16 NC - Not connected Open or GND 18 - NC - Not connected Open or GND 19 - NC - Not connected Open or GND 20 - NC - Not connected 21 - EP - Exposed die pad Open or GND Integrated high-side switch output, connect freewheeling diode and inductor to this pin Open or GND Connect to GND 1) D = Digital, A = Analog, S = Supply, HV = High voltage (see max. ratings), I = Input, O = Output Note: Pins with identical names have to be connected. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 3/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 3 Absolute Maximum Ratings Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages referred to VGND. Currents flowing into terminals are positive, those drawn out of a terminal are negative. Description Condition Symbol Min Max Unit Supply voltage at pin VIN V VIN -0.3 40 V Voltage at pin ON VON -0.3 40 V Voltage at pin PGOOD VPGOOD -0.3 40 V Current at pin PGOOD IPGOOD 0 5 mA Voltage at pin SENSE VSENSE -0.3 6 V Voltage at pin OCP VOCP -0.3 0.8 V Voltage at pin LXT VLXT -10 VIN +0.3 V Power dissipation (E522.01-06) PTOT 500 mW Power dissipation (E522.07-09) PTOT 1 W Storage temperature TSTG +150 °C -50 4 ESD Protection Description Condition Symbol Min Max Unit ESD HBM protection at pin VIN 1) VESD(HBM) 3 kV ESD HBM protection at all other pins 1) VESD(HBM) 2 kV ESD CDM protection at all pins 2) VESD(CDM) 500 V ESD CDM protection at corner pins 2) VESD(CDM)C 750 V 1) According to AEC-Q100-002 (HBM) chip level test 2) According to AEC-Q100-011 (CDM) chip level test 5 Recommended Operating Conditions Description Condition Symbol Min Max Unit Junction temperature TJ -40 +150 °C Ambient temperature Tamb -40 +125 °C Supply voltage at pin VIN V VIN 4.5 1) 40 V 1) For V VIN < VOUT , E522.0x enters 100% duty cycle mode This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 4/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY 6 Electrical Characteristics (V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit Supply Sleep mode quiescent current VON = 0; non-switching IVIN,q,SLP 8 µA Active mode quiescent current VON = V VIN > 8V; IOUT < 100µA IVIN,q 12 µA Active mode quiescent current VON = V VIN L XT driver OFF IVIN,q 150 µA Input resistance at pin ON VON = V VIN = 14V ION 7 MΩ Threshold voltage at pin ON V VIN > 4.5V VON,th VIN Undervoltage Lockout V VIN rising 1.40 1.48 1.56 V V VIN,UV 3.5 4.2 V VOCP 500 Output Current Limit Programming Output voltage at OCP 24kΩ ≤ ROCP ≤ 60kΩ OCP Selection Resistor ROCP Load capacitance at OCP COCP 24 mV 60 kΩ 100 pF 5.0 5.2 V 0.7 1.5 Ω E522.01 Output Output regulation threshold 1) IOUT = 500mA V VIN = 14V On Resistance at LXT V VIN = 14V 4.8 RDS(ON) 2) IOCP,24kΩ 740 830 920 mA ROCP = 60kΩ 2) IOCP,60kΩ 300 350 400 mA Output regulation threshold 1) IOUT = 500mA V VIN = 14V VOUT 3.2 3.33 3.46 V On Resistance at LXT V VIN = 14V 0.7 1.5 Ω Over-current detection ROCP = 24kΩ VOUT E522.02 Output Overcurrent detection RDS(ON) ROCP = 24kΩ 2) IOCP,24kΩ 740 830 920 mA ROCP = 60kΩ 2) IOCP,60kΩ 300 350 400 mA VOUT 4.8 5.0 5.2 V 1.1 2.5 Ω E522.03 Output Output regulation threshold 1) IOUT = 350mA V VIN = 14V On Resistance at LXT V VIN = 14V Overcurrent detection RDS(ON) ROCP = 24kΩ 2) IOCP,24kΩ 490 550 610 mA ROCP = 60kΩ 2) IOCP,60kΩ 190 230 270 mA VOUT 3.2 3.33 3.46 V 1.1 2.5 Ω E522.04 Output Output regulation threshold 1) IOUT = 350mA V VIN = 14V On Resistance at LXT V VIN = 14V Overcurrent detection RDS(ON) ROCP = 24kΩ 2) IOCP,24kΩ 490 550 610 mA ROCP = 60kΩ 2) IOCP,60kΩ 190 230 270 mA 1) Given value is switching threshold at pin SENSE, for V VIN < VOUT regulator provides 100% conductance mode 2) Measured at V VIN = 14V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 5/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 Electrical Characteristics (continued) (V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit 1.416 1.475 1.534 V 0.7 1.5 Ω E522.05 Output Output regulation threshold 1) IOUT = 500mA V VIN = 14V VSENSE On Resistance at LXT V VIN = 14V RDS(ON) Over-current detection ROCP = 24kΩ 2) IOCP,24kΩ 740 830 920 mA ROCP = 60kΩ 2) IOCP,60kΩ 300 350 400 mA 1.416 1.475 1.534 V 1.1 2.5 Ω E522.06 Output Output regulation threshold 1) IOUT = 350mA V VIN = 14V VSENSE On Resistance at LXT V VIN = 14V RDS(ON) Overcurrent detection ROCP = 24kΩ 2) IOCP,24kΩ 490 550 610 mA ROCP = 60kΩ 2) IOCP,60kΩ 190 230 270 mA VOUT 4.8 5.00 5.2 V 0.44 0.75 Ω E522.07 Output Output regulation threshold 1) IOUT = 1A V VIN = 14V On Resistance at LXT V VIN = 14V Over-current detection RDS(ON) ROCP = 24kΩ 2) IOCP,24kΩ 1.3 1.45 1.6 A ROCP = 60kΩ 2) IOCP,60kΩ 0.5 0.6 0.7 A VOUT 3.2 3.33 3.46 V 0.44 0.75 Ω E522.08 Output Output regulation threshold 1) IOUT = 1A V VIN = 14V On Resistance at LXT V VIN = 14V Overcurrent detection RDS(ON) ROCP = 24kΩ 2) IOCP,24kΩ 1.3 1.45 1.6 A ROCP = 60kΩ 2) IOCP,60kΩ 0.5 0.6 0.7 A VSENSE 1.416 1.475 1.534 V E522.09 Output Output regulation threshold 1) IOUT = 1A V VIN = 14V On Resistance at LXT V VIN = 14V RDS(ON) 0.44 0.75 Ω ROCP = 24kΩ 2) IOCP,24kΩ 1.3 1.45 1.6 A ROCP = 60kΩ IOCP,60kΩ 0.5 0.6 0.7 A Overcurrent detection 2) 1) Given value is switching threshold at pin SENSE, for V VIN < VSENSE regulator provides 100% conductance mode 2) Measured at V VIN = 14V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 6/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Electrical Characteristics (continued) (V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) Description Condition Symbol Min fS 0 Typ Max Unit 1.75 MHz Switching Switching frequency IOUT < IOCP tLXT(ON) 260 ns IOUT ≥ IOCP tLXT(ON) 100 ns PGOOD = '1' tLXT(OFF) 520 ns IOUT ≥ IOCP; VSENSE > 1.2V tLXT(OFF) 1330 ns IOUT ≥ IOCP; VSENSE < 1.0V tLXT(OFF) 2450 ns Power good detection threshold, rising edge VSENSE,th(LH)/ VOUT(NOM) 92.5 % Power good detection threshold, falling edge VSENSE,th(HL)/ VOUT(NOM) 90 % 0.2 Minimum LXT on time Minimum LXT off time Power Good Detector Output voltage at pin PGOOD VSENSE < VSENSE,th(HL) IPGOOD = 2mA VPGOOD Leakage at pin PGOOD VSENSE = VOUT,NOM VPGOOD = 5V IPGOOD,lk 0.4 V 3 µA 150 μs IDLE Detector IDLE detection delay no switching TIDLE 70 110 Average LXT duty cycle for IDLE Discontinuous operation DIDLE 1.38 % Wake-up threshold during IDLE relative to nominal VOUT in % VSENSE,WU 95 % Wake-up delay after IDLE VSENSE < VSENSE,WU TDEL,ACTIVE 10 25 μs This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 7/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 7 Typical Operating Characteristics F_LXT_V Diagrams showing typical characteristics at V VIN=14V and TAMB=25°, unless otherwise noted EFF_DEMO_MAWE Operating Frequency vs. normalized VIN/VOUT E522.01 Efficiency vs Loadcurrent (VIN 7V, 14V, 24V) 100 90 F_LXT / MHz Efficiency / % 95 85 80 75 70 65 60 0 50 100 150 200 250 300 350 400 450 500 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 1.0 Loadcurrent / mA EFF,7V EFF,14V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 V_SWITCH5V_V VIN/VOUT Ratio V_SWITCH5V_T (continuous conduction mode) 5V Sense Threshold vs. Temperature 5V Sense Threshold vs. Supply Voltage VIN 5.20 5.20 5.15 5.15 5.10 5.10 V_Swicth / V V_Swicth / V 1.5 EFF,24V 5.05 5.00 4.95 5.05 5.00 4.95 4.90 4.90 4.85 4.85 4.80 4.80 -40 -20 0 20 40 60 80 100 120 V_SWITCH3V_T 140 4 8 12 16 Temp. / °C 20 24 28 32 V_SWITCH3V_V 36 VIN / V (for V VIN<VOUT sense threshold is info only) 3.3V Sense Threshold vs. Supply Voltage VIN 3.45 3.40 3.40 3.35 V_Swicth / V V_Swicth / V 3.3V Sense Threshold vs. Temperature 3.45 3.30 3.25 3.35 3.30 3.25 3.20 3.20 3.15 3.15 -40 -20 0 20 40 60 80 100 120 140 4 8 12 16 Temp. / °C 24 28 32 36 Adj . Swit ching Threshold vs. Supply VIN Adj . Swit ching Threshold vs. Temperat ure 1.60 1.60 1.58 1.58 1.56 1.56 V _ S wi c t h / V V _ S wi c t h / V 20 VIN / V 1.54 1.52 1.50 1.48 1.46 1.44 1.54 1.52 1.50 1.48 1.46 1.44 1.42 1.42 1.40 1.40 1.38 1.38 1.36 1.36 - 40 - 20 0 20 40 60 80 100 120 4 140 T em p. / ° C 8 12 16 20 24 28 32 36 VIN / V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0064E.01 8/24 Seite 1 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY I_ACTIVE_T T_WAKEUP_T Supply Current vs. Temperature (Active Mode) Re-Enable Delay vs. Temperature (Idle-to-Active) 20 260 18 240 16 220 I_VIN / µA t_del / µs 14 12 10 8 200 180 160 6 140 4 120 2 100 0 -40 -20 0 20 40 60 80 Temp. / °C 100 120 -40 140 -20 0 20 40 60 80 100 120 140 Temp. / °C I_SLEEP_IDLE_T Supply Current vs. Temperature (Sleep & Idle Mode) 30 27 21 N / µA I_VIN / µA 24 18 15 12 9 6 3 0 -50 .0 -3 0.0 -10.0 10.0 30.0 50.0 70.0 90.0 Temp. / °C I_VIN,SLEEP 11 0.0 130.0 150.0 I_VIN,IDLE I_OCP1_T I_OCP2_T Current Limitation vs. Temperature (500mA Device) Current Limitation vs. Temperature (350mA Device) 10 00 650 9 00 600 8 50 550 8 00 I_LXT / mA I_LXT / mA 9 50 7 50 7 00 6 50 6 00 5 50 500 450 400 350 5 00 4 50 300 4 00 250 3 50 200 3 00 2 50 150 -40 .0 -20 .0 0.0 20.0 40.0 60.0 80.0 T emp. / °C I_OCP,24kOhm 100.0 120.0 140.0 -40.0 0.0 20.0 40.0 Temp.60.0 / °C 80.0 I_OCP,24kOhm 100.0 120.0 140.0 I_OCP,60kOhm Current Limit at ion v s. VI N Volt age ( 24kOhm@OCP) Current Limit at ion v s. Temperat ure ( 1A Dev ic e) 1600 1600 1500 1500 1400 1400 1300 1300 I_LXT / m A I_LXT / m A -20.0 I_OCP,60kOhm 1200 1100 1000 900 800 1200 1100 1000 900 800 700 700 600 600 500 500 400 400 -40.0 -20.0 0.0 20.0 40.0 60.0 Tem p. / °C 80.0 I _ OCP,2 4 k Oh m 100.0 120.0 140.0 4.0 I _ OCP,6 0 k Oh m 8.0 12.0 16.0 I _ OCP,3 5 0 m A 20.0 VIN / V 24.0 I _ OCP,5 0 0 m A 28.0 32.0 36.0 I _ OCP,1 A This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0064E.01 Seite 1 Seite 1 9/24 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 T_GATEDEL_V I nt ernal FET On- Resist anc e v s. Temperat ure Propagation Delay Sense to LXT vs VIN Voltage 150.0 1.7 140.0 1.5 130.0 1.3 t_Delay / ns R_LXT,ON / Ohm 1.9 1.1 0.9 0.7 120.0 110.0 100.0 90.0 80.0 70.0 0.5 60.0 0.3 50.0 40.0 0.1 30.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 Tem p. / °C 3 5 0 m A r a te d 4.0 5 0 0 m A r a te d 6.0 8.0 10.0 1 A r a te d 12.0 14.0 16.0 Suppl y Vol tage / V Sens e,Rise 18.0 20.0 22.0 24 .0 Sense,Fall V_ON_T Typ. VIN Undervoltage Lockout (vs. Temperature) Enable Threshold at ON vs Temperature 4.20 1.52 4.00 V_ON / V V_Underv oltage / V 1.50 3.80 3.60 3.40 1.48 1.46 3.20 3.00 1.44 2.80 -40 -20 0 20 40 60 80 Temp. / °C 100 120 1.42 140 -40.0 R_ON_V -20.0 0.0 20.0 40.0 Temp.60.0 / °C Enable 80.0 100.0 120.0 140.0 Dis able ON Pulldown Resistance vs ON Voltage 10.00 R_ON,PD / MOhm 9.50 9.00 8.50 8.00 7.50 7.00 6.50 6.00 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 V_ON / V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 10/24 QM-No.: 25DS0064E.01 Seite 1 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY 8 Functional Description 8.1 General Description E522.0x product family is a fixed output voltage step-down converter family intended for current-sensitive automotive and general battery driven applications, featuring open loop stability and short current limitation for the integrated driver transistor. High operating frequency allows the use of small-sized external components. Integrated IDLE detection provides very low standby currents, significantly reducing the applications total current consumption. If the application supplied by E522.0x is set into low-current mode (typ. << 1mA, see 8.3), current consumption at VIN is adapted to typical 12µA only. The pulse frequency modulation (PFM) scheme does not need a clock signal for operation, providing minimum ON/ OFF time regulation for the internal switch. Furthermore, the PFM scheme allows fastest transient line and load responses without the need for external compensation networks. Adjustable internal current measurement allows optimal adaption to the inductor without the need for a shunt resistor. Pin ON Load condition Load condition Internal Signal “IDLE” VON < VON,TH Mode VOUT IVIN SLEEP 0V 8µA VON > VON,TH Nominal load D > DIDLE “0” NORMAL VOUT,nom 150µA VON > VON,TH Reduced load << 1mA D < DIDLE “1” IDLE VOUT,nom - (0%... -5%) 12µA 8.2 Pulse Frequency Modulated Converter The LXT switch control signal is based on a combination of output voltage VSENSE, input voltage V VIN and measured switch current. It provides adaptive frequency in the range of 0Hz up to typ. 1.33MHz as seen in typical performance figures. To avoid unnecessary switching, a minimum ON time of typ. 260ns and OFF time of 520ns is used. ON time will be reduced below 260ns if over-current is detected. OFF time will automatically be increased in length to limit current flow during start-up or short circuit to GND at pin LXT or VOUT. The figure below shows the typical normalized operating frequency in continuous conduction mode: This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 11/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 F_LXT_V F_LXT / MHz Operating Frequency vs. normalized VIN/VOUT 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VIN/VOUT Ratio Figure 3: Operating Frequency vs normalized VIN/VOUT Ratio 8.3 Idle Detection Idle operation basically is a sequence of standby periods followed by recharge cycles. During IDLE the application is supplied by the output capacitance. The reference is switched to typ. 95% of nominal value, at which the converter will be reactivated to high power operation. In this way, light load currents are compressed to short recharge phases, during which a high efficiency can be reached. 1 5 Vout 3 2 Ref 1 Either >110µs no switching or duty cycle falls below <1:72 the IC enters Idle Mode 2 In Idle Mode the reference is reduced by 5% 4 3 When VOUT reaches lower limit, switching is activated and reference is set to nominal value 4 After 110µs time-out or DC <1:72 => E522.0x enters Idle Mode again Switch 5 Normal Mode is entered again when load is back to nominal range Figure 4: Behaviour in IDLE Mode E522.0x automatically switches between IDLE and ACTIVE if no external load is applied to E522.0x. The criterion for the decision is that either no switching activity occurred for longer than typ. 110µs or the duty cycle of the converter falls below a limit of typically 1:72. (see figure 4) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet Seite 1 12/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY 9 Typical Operating Circuit IN D2 L2 C6 C5 C4 C3 VIN R3 ON L1 LXT Opt. EMC Filter PGND VOUT C2 D1 R6 C1 SENSE E522.0x OCP R2 R1 AGND GND PGOOD PGOOD C7 R4 SENSE VOUT R5 external programming for E522.05/06/09 Figure 5: Typical operating circuit diagram Table 2: External Components Symbol Min R1 R2 Typ Max Unit 3.3 24 60 Description kΩ Pull up resistor for PGOOD kΩ OCP configuration resistor R3 3.3 kΩ Optional resistor for connection to VIN R4 30 kΩ Resistor for output voltage programming R5 30 kΩ Resistor for output voltage programming R6 0.2 Ω Optional ESR-equivalent resistor 100 µF Output filter capacitor, low ESR nF Output filter capacitor, low ESR, low ESL type 33 µF Input filter capacitor C4 220 nF Input filter capacitor, low ESR, low ESL type C5 100 nF EMC capacitor; low ESR, low ESL type C6 1 nF EMC capacitor; low ESR, low ESL type C1 47 C2 C3 1) 33 20 100 C7 Optional AC-coupling capacitor (see chapter 9.2.5) L1 18 33 82 µH Inductor LLXT @ E522.01-06 L1 10 22 82 µH Inductor LLXT @ E522.07-09 L2 EMC ferrite e.g. Würth 742-792-118 D1 Freewheeling diode for LXT, preferred Vishay SS14 D2 Optional reverse polarity protection diode 1) Select for VOUT according to R4 =R5⋅( V OUT −V SENSE ) V SENSE This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 13/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 9.2 Application / Implementation Hints The following chapter will give additional recommendations and advices for the implementation of E522.0x, giving starting values for components during prototyping. 9.2.1 Maximum Input Voltage in case of adjustable output voltage (E522.05/06/09) The maximum input voltage is defined by the minimum TON,MIN (during over-current limitation) and the requested output voltage. The following diagram shows the recommended area for the input voltage. If the input voltage is higher than recommended, due to transient effects the maximum current in the inductor may exceed the configured over-current limitation during start-up or in case of short circuit. VOUT = requested VOUT ILLXT > IOCP 40 38 RECOMMENDED AREA 36 34 32 30 VOUT = requested VOUT IL < IOCP 28 26 VIN [V] 24 22 20 18 16 14 VOUT ≤ VIN (100% DutyCycle) 12 10 8 6 4 2 39 36 37,5 33 34,5 30 31,5 27 28,5 24 25,5 21 22,5 18 19,5 15 16,5 12 13,5 9 10,5 6 7,5 3 4,5 1,5 0 VOUT [V] Figure 6: Maximum recommended VIN This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 14/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY 9.2.2 Maximum output current E522.05/06/09 E522.0x limits the inductor peak current. Lower end of inductor ripple current depends on TOFF,MIN, the inductance value and the output voltage. The maximum available output current is less or equal to the average current flowing in the inductance. The following graph visualizes the relation between these parameters. Maximum IOUT L=100µH 1000 L=82µH L=63µH 900 L=10µH L=18µH L=52µH L=33µH 800 IOUT (mA) 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 VOUT (V) Figure 7: Maximum Output Current vs. Ouput Voltage (1A / E522.09) For example, with an inductor of 18μH and an output voltage of 12V, the minimum available output current is 690mA. Maximum IOUT 500 L=100µH 450 L=82µH L=63µH 400 L=52µH L=33µH L=18µH IOUT (mA) 350 300 250 200 150 100 50 0 0 5 10 15 20 25 30 35 40 VOUT (V) Figure 8: Maximum Output Current vs. Ouput Voltage (500mA / E522.05) For example, with an inductor of 33μH and an output voltage of 20V, the minimum available output current is 295mA. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 15/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 Maximum IOUT 350 300 L=100uH L=82uH L=63uH 250 L=52uH IOUT (mA) L=33uH 200 L=18uH 150 100 50 0 0 5 10 15 20 25 30 35 40 VOUT (V) Figure 8: Maximum Output Current vs. Ouput Voltage (350mA / E522.06) For example, with an inductor of 33µH and an output voltage of 20V, the minimum available output current is 175mA. 9.2.3 LLXT Inductor Selection For a given application (in continuous conducting mode), it is either recommended to choose an inductance value that is suitable for ±15% current ripple at the typical operating frequency or to use the following equations. Depending on V VIN to VOUT ratio, usually two equations describe the maximum peak-to-peak current ripple in the inductor LLXT. It can either be calculated from the maximum input voltage at VIN (V VIN,MAX,APP) T ON , MIN⋅(V VIN , MAX , APP −V OUT , NOM ) I RIPPLE , LXT , PP1= a) L LXT or by the following equation (with VDIODE being the forward voltage drop of the free-wheeling diode) T OFF ,MIN , NOM⋅(V OUT , NOM +V DIODE ) b) I = RIPPLE , LXT , PP2 L LXT Take the higher result of both equations into account during choice of the external capacitors ESR (see chapter 9.2.4). The minimum ripple may either occur at the maximum operation frequency or at the lowest input voltage that is required for the application. In most cases, the current ripple at peak-operating-frequency can also be calculated by equation b) above. To choose a sufficiently high saturation current for the inductor LLXT, consider - the maximum application load current plus half of the maximum ripple current calculated above and - the configured current limitation derived from ROCP (to avoid degradation or other effects due to saturation of the inductor core - depending on the magnetic core material) In general an additional saturation margin of >25% for the inductor current rating is recommended for transient effects, especially at extreme V VIN to VOUT voltage ratios. DC resistance of LLXT (referred here as RLXT,DC) reduces efficiency and contributes to the losses in the inductor (combined with AC losses which may arise due the use of high frequency operation). A DC resistance <0.5Ω is recommended for E522.01-06 (<0.25Ω for E522.07-09). At a given load current ILOAD, resistance affects minimum input voltage required to regulate VOUT in the following way V IN, MIN =V OUT , NOM +I LOAD +( R DS (ON )+R LXT , DC ) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 16/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY 9.2.4 COUT Capacitor Selection During nominal operation electrical serial resistance (ESR) of the capacitor is important to generate a minimum output voltage ripple of 10mV to 100mV. This ripple is necessary to provide a proper regulation information for E522.0x. It depends on peripheral elements chosen (LLXT and COUT) and their parasitic behaviour as explained further on. The ESR of the capacitor COUT (named RESR,COUT, see operating circuit R6) must be high enough to ensure a voltage ripple for VOUT to provide high-frequency switching. The ripple voltage can basically be calculated using the inductor current ripple (see chapter 9.2.3) by V RIPPLE ,OUT =R ESR , COUT⋅I RIPPLE , LXT , PP Electrical serial inductance should be kept as low as possible, what can be achieved by placing a parallel ceramic type capacitor of <100nF (typ. 33nF). During IDLE, the application is supplied by the output capacitor COUT. The capacitance, which is necessary to power the application until E522.0x fully wakes up, can be calculated using the maximum load current step (ILOAD,MAX) and a maximum tolerable voltage drop (UDROP,MAX) in the following way: C OUT = I LOAD , MAX⋅25µs U DROP ,MAX −R ESR ,COUT⋅I LOAD ,MAX For example, assuming a maximum load step of 350mA, a tolerable voltage drop of 120mV and RESR,COUT being 120mΩ the output capacitance should be chosen >112µF. For proper active operation, it is necessary to choose capacitance values >22µF at VOUT. Take into account, that many capacitor types show a strong temperature and voltage dependency, or may be sensible to high peak currents. Make sure, that at extreme temperatures and voltages the capacitance value is reached. For automotive environments capacitors of X7R material (or better) may be necessary. 9.2.5 RSENSE, CSENSE Selection for adjustable E522.05/06/09 The resistors RSENSE1 and RSENSE2 have to be chosen high enough to avoid a reduction of the efficiency. A typical current of 50 μA is recommended to avoid sensitivity to noise. The capacitor CSENSE helps to produce a correct ripple voltage at SENSE pin. Without enough ripple at SENSE pin, the regulation will not be optimal and you could observe burst pulses at LXT pin. When the ripple voltage is high enough, you should see a stable operating frequency. To choose CSENSE, start without any capacitor and increase the value until you are satisfied with the regulation. 9.2.6 Rectification- / Freewheeling Diode Selection The free-wheeling diode must have a low forward voltage (to increase efficiency) as well as a very low reverse recovery time of typically 10ns. In general, a fast Schottky type diode is recommended. High parasitic capacitance as well as long reverse recovery time may cause additional radiated emission at LXT. Parasitic capacitance of this diode decreases the overall efficiency and causes current spikes when the LXT driver turns on. During IDLE, consider the leakage of the free-wheeling diode at nominal converter output voltage which will contribute to the overall current consumption (see IDLE adaption, chapter 9.2.9). In general, a bipolar diode can provide lower leakage current and parasitic capacitance, but may also have a negative impact on efficiency due to higher forward voltage drop. Reverse recovery time of the diode must be taken into account. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 17/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 9.2.7 Over-Current Configuration at OCP To adjust the internal over-current limitation of the LXT high-side driver to a value of ILIM, the resistor between OCP and GND can be chosen by interpolation between the specified values (in the range of 24kΩ to 60kΩ) by ROCP = I OCP ,24k Ω ⋅24k Ω ∣ I LIM ⩽I OCP ,24 k Ω I LIM Choice the current ILIM with respect to the maximum usable current of the inductor LLXT. Capacitive load at pin OCP has to be avoided due to stability reasons. It must not exceed 100pF. 9.2.8 VIN Capacitor Selection VIN input capacitance value can be chosen from an acceptable voltage ripple V VIN,RIPPLE,MAX (defined by the overall application requirements) together with ILIM (configured by ROCP) and the ESR of VIN capacitor by C VIN = I LIM t ON,MIN V VIN , RIPPLE, MAX I LIM R ESR, C VIN Both, the result of above equation, but also a minimum of 22µF are to be taken into account. Additionally, a parallel low ESR and low ESL ceramic capacitor type has to be placed (typ. 220nF). Considerations regarding temperature and voltage dependency apply to VIN capacitors as well (see chapter 9.2.4), especially voltage dependency. 9.2.9 Idle Adaption Options IDLE / ACTIVE state detection can be adapted to a given application by consideration of the following external influences: a) During start-up, the energy within the inductor (approximately 0.5 x LLXT x ILIM)2 has to be consumed by the load within the IDLE detection time-out (to stay in ACTIVE mode). It is proportional to the inductance LLXT and to the square of configured OCP current limit. b) At nominal operation, the power which is transferred to the output in discontinuous operation depends on the inductance at LLXT, the current which is build up during TON,MIN and the duty-cycle IDLE condition. This detection mechanism allows to shift the detection threshold proportional to 1/LLXT. Note, that the output power in this case also depends on the square of charging voltage V VIN-VOUT, which may require to adapt LLXT to the typical application input voltage. c) In general, cross-coupling between high voltage switching of LXT and input SENSE is to be avoided. In case that practically it may not be completely avoidable, a third effect based on the amount of coupling must be considered. Distortions can lead to self-excitation of the regulator, charging the output until the lower end of the output voltage ripple crosses the regulation point. The average of the output voltage ripple (1/2 for triangular ripple) has to be discharged by the load before a time-out is detected (typ. 110µs - to stay in ACTIVE mode). This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 18/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Depending on choice of external components, the rectification / free-wheeling diode leakage current has to be taken into account, because it poses a load to E522.0x, too. If it generates sufficient switching activity to trigger the duty cycle IDLE condition, the converter will provide nominal output voltage. Consider the leakage current of the free-wheeling diode for a reverse voltage of VOUT and the maximum ambient temperature. The above described measures a,b,c (in most cases choice of inductance LLXT) can be used to adapt the applications dimensioning to this additional load. 9.2.10 Misc Application Remarks Optional, regarding VIN voltage supervision, the accurate threshold at pin ON can be used to implement undervoltage lock-out for the converter, automatically switching to sleep mode if necessary. In such cases a resistive divider between VIN and GND, connected to ON can be used. The threshold is defined by V VIN ,MIN = V ON ,TH 1 R2 R1 Choose the divider impedance significantly lower than the typical input impedance of 7MΩ at pin ON to avoid inaccuracy. Note, that the divider current directly contributes to the application current consumption. For reverse polarity protection a diode (or comparable reverse voltage protection measure) for VIN is recommended. In EMC sensitive environments additional decoupling measures at VIN are recommended. 10 Ordering Information Product ID VOUT IOUT Ambient Temp. Range Package E522.01_QFN20L4 5V 500mA -40°C to +125°C QFN20L4 E522.02_QFN20L4 3.3V 500mA -40°C to +125°C QFN20L4 E522.03_QFN20L4 5V 350mA -40°C to +125°C QFN20L4 E522.04_QFN20L4 3.3V 350mA -40°C to +125°C QFN20L4 E522.05_QFN20L4 1.5V to 40V 500mA -40°C to +125°C QFN20L4 E522.06_QFN20L4 1.5V to 40V 350mA -40°C to +125°C QFN20L4 E522.07_QFN20L4 5V 1A -40°C to +125°C QFN20L4 E522.08_QFN20L4 3.3V 1A -40°C to +125°C QFN20L4 E522.09_QFN20L4 1.5V to 40V 1A -40°C to +125°C QFN20L4 E522.01_TSSOP16 5V 500mA -40°C to +125°C TSSOP16 E522.02_TSSOP16 3.3V 500mA -40°C to +125°C TSSOP16 E522.03_TSSOP16 5V 350mA -40°C to +125°C TSSOP16 E522.04_TSSOP16 3.3V 350mA -40°C to +125°C TSSOP16 E522.05_TSSOP16 1.5V to 40V 500mA -40°C to +125°C TSSOP16 E522.06_TSSOP16 1.5V to 40V 350mA -40°C to +125°C TSSOP16 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 19/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 PRELIMINARY INFORMATION - MAY 29, 2012 11 Package Reference 11.1 Package Reference QFN20L4 The E522.0x family members are available in a Pb free, RoHS compliant, QFN20L4 plastic package. For dimension details refer to JEDEC MO-220 VGGD-5. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C. It has been qualified according to IEC 86 part 2-20 for the following soldering profile: 1. (200±5) °C, dwell time (50±5) s 2. (260±5) °C, dwell time <10 s 11.2 Package Reference TSSOP16 The E522.0x family members are available in a Pb free, RoHS compliant, TSSOP16 plastic package. For dimension details refer to JEDEC MO-153 AB. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C. It has been qualified according to IEC 86 part 2-20 for the following soldering profile: 1. (200±5) °C, dwell time (50±5) s 2. (260±5) °C, dwell time <10 s E522.01-06 max. Package Power Dissipation max. Device Power vs Ambient Temperature 0,6 Power [W] 0,5 0,4 max Power QFN20L4 0,3 max Power TSSOP16 Ext. Heatsink 30K/W max Power TSSOP16 max Power TSSOP16 Ext. Heatsink 10K/W 0,2 0,1 0 70 80 90 100 110 120 130 140 Ambient Temperature [°C] Figure 9: Package power dissipation E522.01-06 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 20/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY E522.07/08/09 max. Package Power Dissipation Device Power vs Ambient Temperature 1,2 Package Power Dissipation [W] 1,1 1 0,9 max Pow er QFN20L4 0,8 0,7 0,6 0,5 0,4 70 80 90 100 110 120 130 140 Ambient Temperature [°C] Figure 10: Package power dissipation E522.07-09 11.3 Marking Top Side ÿÿ ÿÿ ÿÿ ÿÿ Elmos Logo 52201 XXXSL YWWR@ Signature Explanation 52201 ELMOS project number A ELMOS project revision code XXX Production lot number S Assembler code L Production line code YWW Year and week of assembly R Mask revision code @ ELMOS internal code This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 21/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 Date : 05.01.2012 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 Author: ASto 20 Lead Quad Flat Non Leaded Package 11.4 Package Outline QFN20L4 (QFN20L4) QM-No.: 08SP0689.02 Package Outline and Dimensions are according JEDEC MO-220 K, variant VGGD-5 Description min mm typ max min inch typ max A 0.80 0.90 1.00 0.031 0.035 0.039 Stand off A1 0.00 0.02 0.05 0.000 0.00079 0.002 Thickness of terminal leads, including lead finish A3 -- 0.20 REF -- -- 0.0079 REF -- b 0.18 0.25 0.30 0.0071 0.0098 0.012 Package height Width of terminal leads Symbol D/E -- 4.00 BSC -- -- 0.157 BSC -- D2 / E2 2.50 2.65 2.80 0.098 0.104 0.110 e -- 0.50 BSC -- -- 0.020 BSC -- Length of terminal for soldering to substrate L 0.35 0.40 0.45 0.014 0.016 0.018 Number of terminal positions N Package length / width Length / width of exposed pad Lead pitch 20 20 Note: the mm values are valid, the inch values contains rounding errors Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification) Page 1 of 1 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 22/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 PACKAGE OUTLINE SPECIFICATION Date : 04.01.2012 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012 Author: ASto 16 Lead Thin Shrink Small Outline Package 11.5 Package Outline TSSOP16 (TSSOP16) QM-No.: 08SP0669.05 Package Outline and Dimensions are according JEDEC MO-153 F, variant AB. Description Symbol min mm typ max min inch typ max 0.047 Package height A -- -- 1.20 -- -- Stand off A1 0.05 -- 0.15 0.002 -- 0.006 Package body thickness A2 0.80 1.00 1.05 0.031 0.039 0.041 Width of terminal leads, inclusive lead finish b 0.19 -- 0.30 0.007 -- 0.012 Thickness of terminal leads, inclusive lead finish c 0.09 -- 0.20 0.004 -- 0.008 Package length D 4.90 5.00 5.10 0.193 0.197 0.201 4.50 0.169 Package width Package body width Lead pitch Length of terminal for soldering to substrate E 6.40 BSC E1 4.30 e 4.40 0.252 BSC 0.65 BSC 0.173 0.177 0.026 BSC L 0.45 0.60 0.75 0.018 0.024 0.030 Angle of lead mounting area phi [°] 0 -- 8 0 -- 8 mold release angle phi1 [°] 12 REF 12 REF N 16 16 Number of terminal positions Note: the mm values are valid, the inch values contains rounding errors Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification) Page 1 of 1 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 23/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 PACKAGE OUTLINE SPECIFICATION WARNING – Life Support Applications Policy ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing ELMOS Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an ELMOS Semiconductor AG Product could cause loss of human life, body injury or damage to property. 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ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet 24/24 QM-No.: 25DS0064E.01 E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY PRELIMINARY INFORMATION - MAY 29, 2012