BUV298V NPN transistor power module General features ■ NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package (U.L. compliant) for easy mounting ■ Low internal parasitic inductance ■ In compliance with the 2002/93/EC European Directive Pin 4 not connected ISOTOP Applications Internal schematic diagram ■ Motor control ■ SMPS & UPS ■ Welding equipment Order codes Part Number Marking Package Packing BUV298V BUV298V ISOTOP Tube November 2006 Rev 3 1/12 www.st.com 12 BUV298V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits and waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 BUV298V 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Value Unit 850 V 450 V Emitter-base voltage (IC = 0) 7 V Collector current 50 A Collector peak current (tP < 10ms) 75 A Base current 10 A IBM Base peak current (tP < 10ms) 16 A Ptot Total dissipation at Tc = 25°C 250 W Visol Insulation insulation withstand voltage (RMS) from all four leads to external heatsink 2500 V Tstg Storage temperature -65 to 150 °C 150 °C VCEV Parameter Collector-emitter voltage (VBE = -5V) VCEO(sus) Collector-emitter voltage (IB = 0) VEBO IC ICM IB TJ Table 2. Max. operating junction temperature Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case __max Thermal resistance case heatsink with conductive grease applied __max 0.5 °C/W 0.05 °C/W Rthc-h 3/12 Electrical characteristics 2 BUV298V Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter ICER Collector cut-off current (RBE =5W) VCE =VCEV ICEV Collector cut-off current (VBE =-5V) VCE =VCEV IEBO Emitter cut-off current (IC =0) Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) Test Conditions VCE =VCEV VCE =VCEV Typ. Max. Unit Tj =100 °C 0.4 2 mA mA Tj =100 °C 0.4 2 mA mA 2 mA VEB =5V L =25mH IC =0.2A Vclamp =450V 450 IC =32A Collector-emitter saturation voltage IC =32A IB =6.4A 0.35 1.2 V IC =32A IB =6.4A Tj =100°C 0.6 2 V VBE(sat) (1) Base-emitter saturation voltage IC =32A IB =6.4A 1 0.9 1.5 V 1.5 V dic/dt Rate of rise of On-state collector VCC =300V RC =0 tp=3µs VCE(3µs) Collector-emitter dynamic voltage VCC =300V RC =9.3Ω VCE(5µs) Collector-emitter dynamic voltage VCC =300V RC =9.3Ω VCE(sat) (1) ts tf tc VCEW Storage time Fall time Cross-over time Maximum collectoremitter voltage without snubber VCE =5V V DC current gain hFE 12 IC =32A IB =6.4A Tj =100°C IB1 =9.6A IB1 =9.6A Tj =100°C Tj =100°C IC =32A VCC =50V VBB=-5V RBB =0.39Ω IB1 =6.4A Vclamp =450V L =78µH Tj =100°C ICWoff =48A IB1 =6.4A VBB=-5V VCC =50V L =52µH Tj =125°C 160 Tj =100°C IB1 =9.6A Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% 4/12 Min. RBB =0.39Ω 450 210 A/µs 4.5 8 V 2.5 4 V 3.2 4.5 µs 0.25 0.4 µs 0.5 0.7 µs V BUV298V 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Derating curves Figure 4. Collector-emitter voltage vs base-emitter resistance Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage 5/12 Electrical characteristics Figure 7. Reverse biased SOA Figure 8. Figure 9. Reverse biased AOA Figure 10. Forward biased AOA Figure 11. Switching times Inductive load 6/12 BUV298V Forward biased SOA Figure 12. Switching times Inductive load vs temperature BUV298V Electrical characteristics Figure 13. DC current gain 2.2 Test circuits and waveforms Figure 14. Turn-on switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Figure 15. Turn-on switching waveforms 7/12 Electrical characteristics Figure 16. Turn-off switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier Figure 17. Turn-off switching waveforms 8/12 BUV298V BUV298V 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data BUV298V ISOTOP MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 0.594 G1 12.6 12.8 0.496 0.503 G2 3.5 4.3 0.137 1.169 F 4.1 4.3 0.161 0.169 F1 4.6 5 0.181 0.196 P 4 4.3 0.157 0.169 P1 4 4.4 0.157 0.173 S 30.1 30.3 1.185 1.193 P093A 10/12 BUV298V 4 Revision history Revision history Table 4. Revision history Date Revision Changes 01-Mar-2003 1 Initial release. 14-Jan-2004 2 Technical migration from ST-press to EDOCS 27-Nov-2006 3 The document has been reformatted 11/12 BUV298V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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