TANCERAM® CHIP CAPACITORS TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. Tancerams® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. ADVANTAGES • • • • Low ESR Higher Surge Voltage Reduced CHIP Size Higher Insulation Resistance • • • • Low DC Leakage Non-polarized Devices Improved Reliability Higher Ripple Current APPLICATIONS • Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters • DC/DC Converter Smoothing (Input/Output) • General Digital Circuits Typical ESR Comparison Typical Breakdown Voltage Comparison 10 100% 1.0 μF / 16V Tantalum 75% 1 % Distribution ESR (Ohms) 1.0 μF / 16V Tantalum 1.0 μF / 16V TANCERAM ® 0.1 50% 1.0 μF / 16V TANCERAM ® 25% 0.01 0.001 0% 0.01 0.1 1 10 100 0 100 200 300 400 DC Breakdown Voltage Frequency (MHz) HOW TO ORDER TANCERAM® 250 R18 Y 105 Z V VOLTAGE 500 = 50 V 250 = 25 V 160 = 16 V 100 = 10 V 6R3 = 6.3 V CASE SIZE See Chart DIELECTRIC W = X7R X = X5R Y = Y5V CAPACITANCE 1st two digits are significant; third digit denotes number of zeros. TOLERANCE Y5V Z = +80% -20% X7R/X5R K = ±10% M = ±20% TERMINATION V = Ni barrier w/ 100% Sn Plating P/N written: 250R18Y105ZV4E 14 474 = 0.47 µF 105 = 1.00 µF MARKING 4 = Unmarked www.johanson dielectrics.com 4 E TAPE MODIFIER Code Type Reel E Plastic 7” T Paper 7” Tape specifications conform to EIA RS481 500 TANCERAM® CHIP CAPACITORS CAPACITANCE SELECTION CASE SIZE 0402 R07 0603 R14 0805 R15 1206 R18 1210 S41 VDC L W T E/B Inches .040 ±.004 .020 ±.004 .025 Max. .008 ±.004 (mm) (1.02 ±.10) (0.51 ±.10) (0.64) (0.20±.10) L W T E/B Inches .063 ±.008 .032 ±.008 .035 Max. .010±.005 (mm) (1.60 ±.20) (0.81 ±.20) (0.89) (.25±.13) L W T E/B Inches .080 ±.010 .050 ±.010 .060 Max. .020±.010 (mm) (2.03 ±.25) (1.27 ±.25) (1.52) (0.51±.25 ) Inches (mm) (3.17 ±.25) L .125 ±.010 (1.57 ±.25) W .062 ±.010 .070 Max. (1.78) T E/B .020 +.015-0.01 (0.51+.38-.25) Inches (mm) (3.18 ±.25) L .125 ±.010 (2.41 ±.25) W .095 ±.010 .110 Max. (2.8) T E/B .020 +.015-.010 (0.51+.38-.25) 1.0 µF 2.2 µF 4.7 µF 10 µF 22 µF DIELECTRIC 10 6.3 25 16 * 10 6.3 25 16 * • * 25 16 * 50 • • 25 L • • * • * * • • • * • • • • • * • • * 16 E/B Y (Y5V) * * * * • • • • • • • W T X (X5R) 10 6.3 • • • • • • • * 10 • L W T E/B Inches .175 ±.010 .125 ±.010 .140 Max. .035 ±.020 (mm) (4.45 ±.25) (3.17 ±.25) (3.55) (0.89 ±0.51) 100 50 • 16 6.3 DIELECTRIC CODE W X Y * ELECTRICAL CHARACTERISTICS Temperature Coefficient: Dissipation Factor: Insulation Resistance (Min. @ 25°C, WVDC) Dielectric Strength: Test Conditions: Other: • • • 6.3 1812 S43 100 µF W (X7R) 10 6.3 47 µF W X Y W X Y W X • = NEW PART Y W X Y W X Y W X Y = HIGH VOLUME X7R X5R Y5V ±15% (-55 to +125°C) ±15% (-55 to +85°C) +22%, -82% (-30 to +85°C) For ≥ 50 VDC: 5% max. For ≤ 25 VDC: 10% max. For ≥ 50 VDC: 5% max. For ≤ 25 VDC: 10% max. For ≥ 10 VDC: 16% max. For 6.3 VDC: 20% max. 100 ΩF or 10 GΩ, whichever is less 2.5 X WVDC, 25°C, 50mA max. Capacitance values ≤ 22 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms Capacitance values > 22 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms See page 18 for additional dielectric specifications. www.johanson dielectrics.com 15