星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ S1A THRU ·Glass Passivated Die Construction ·Low Forward Voltage Drop and High Current Capability ·Surge Overload Rating to 30A Peak ·Ideally Suited for Automated Assembly ·Available in Lead Free Version S1M 1.0Amp Surface Mount Glass Passivated · Operating Temperature:-65℃ to+150℃ · Storage Temperature:-65℃ to+150℃ · Maximum Thermal Resistance: 30℃/W Junction to Terminal Item Number Device Marking Maximum Recurrent Peak Reverse Voltage S1A S1B S1D S1G S1J S1K S1M S1A S1B S1D S1G S1J S1K S1M 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage Maximum DC Blocking Voltage 35V 70V 140V 280V 420V 560V 700V 50V 100V 200V 400V 600V 800V 1000V Rectifier 50 to 1000 Volts DO-214AC(SMA) (High Profile) Electrical Characteristics@25℃ Unless Otherwise Specified Average Rectified Output Current Peak Forward Surge Current IO 1.0A IFSM 30A TT=100℃ 8.3ms,half Sine-wave Forward Voltage Drop VFM 1.1V IF=1.0A Peak Reverse Current at Rated DC Blocking Voltage IRM 5.0uA 100uA TA=25℃ TA=125℃ Typical Junction Capacitance CT 10pF Notes： 1. Measured at 1.0MHz and applied reverse voltage of 4.0 V DC. 2 2. Thermal Resistance Junction to Terminal ,unit mounted on PC board with 5.0mm (0.013mm thick) copper pads as heat sink. 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９