Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1N4148 Silicon Epitaxial Planar Switching Diode FEATURES ◆ High-speed switching ◆ This diode is also available in MiniMELF case With the type designation LL4148 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL VALUE UNIT Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms IFSM at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range 1) 0.5 1 A 4 Ptot 500 1) mW Tj 200 ℃ Tstg - 65 to + 200 ℃ Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 1 Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1N4148 Characteristics at Ta = 25℃ PARAMETER SYMBOL MIN. MAX. UNIT VF - 1 V at VR = 20 V IR - 25 nA at VR = 75 V IR - 5 μA at VR = 20 V, Tj = 150℃ IR - 50 μA at IR = 100 μA V(BR)R 100 - V at IR = 5 μA V(BR)R 75 - V Ctot - 4 pF Vfr - 2.5 V trr - 4 ns RthA - 0.35 1) ηV 0.45 - Forward Voltage at IF = 10 mA Leakage Current Reverse Breakdown Voltage Capacitance at VR = 0, f = 1 MHz Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) K/mW - Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 2 Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1N4148 3 Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1N4148 Note: Specifications are subject to change without notice. 4